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Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam
(Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam)

A. Uedono, T. Tsutsui, T. Watanabe, S. Kimura, Y. Zhang, M. Lozac'h, L. W. Sang, S. Ishibashi, M. Sumiya.
Journal of Applied Physics 113 [12] 123502. 2013.

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      Created at :2016-05-24 17:18:58 +0900 Updated at :2022-09-05 14:04:34 +0900

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