Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy

Kexiong Zhang, Meiyong Liao, Masatomo Sumiya, Yasuo Koide, Liwen Sang.

Journal of Applied Physics 120 [18] 185305. 2016.

https://doi.org/10.1063/1.4967394

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作成時刻: 2016-11-20 22:19:22 +0900更新時刻: 2024-10-07 04:22:33 +0900

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