Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy | SAMURAI, NIMS Researchers Directory Service

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Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy

Masatomo Sumiya, Shigenori Ueda, Kiyotaka Fukuda, Yuya Asai, Yujin Cho, Liwen Sang, Akira Uedono, Takashi Sekiguchi, Takeyoshi Onuma, Tohru Honda.

Applied Physics Express 11 [2] 021002. 2018.

https://doi.org/10.7567/apex.11.021002

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Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2018-04-04 21:09:13 +0900 Updated at: 2026-11-04 06:45:27 +0900

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