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著者名Masatomo Sumiya, Shigenori Ueda, Kiyotaka Fukuda, Yuya Asai, Yujin Cho, Liwen Sang, Akira Uedono, Takashi Sekiguchi, Takeyoshi Onuma, Tohru Honda.
タイトルValence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy
掲載誌名Applied Physics Express 11 [2] 021002
ISSN: 18820786 18820778
発表年2018
言語English
ESIでのカテゴリ
DOIhttps://doi.org/10.7567/apex.11.021002
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