Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy

Masatomo Sumiya, Shigenori Ueda, Kiyotaka Fukuda, Yuya Asai, Yujin Cho, Liwen Sang, Akira Uedono, Takashi Sekiguchi, Takeyoshi Onuma, Tohru Honda.

Applied Physics Express 11 [2] 021002. 2018.

https://doi.org/10.7567/apex.11.021002

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2018-04-04 21:09:13 +0900更新時刻: 2025-03-16 04:13:58 +0900

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