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Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy

Applied Physics Express 11 [2] 021002. 2018.

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    作成時刻: 2018-04-04 21:09:13 +0900更新時刻: 2024-07-05 04:59:16 +0900

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