HOME > Article > DetailValence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopyMasatomo Sumiya, Shigenori Ueda, Kiyotaka Fukuda, Yuya Asai, Yujin Cho, Liwen Sang, Akira Uedono, Takashi Sekiguchi, Takeyoshi Onuma, Tohru Honda. Applied Physics Express 11 [2] 021002. 2018.https://doi.org/10.7567/apex.11.021002 NIMS author(s)SUMIYA, MasatomoUEDA, ShigenoriCHO, YujinSANG, LiwenFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-04-04 21:09:13 +0900Updated at: 2024-04-02 00:27:05 +0900