Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O2 molecular beam irradiation
International workshop on nitride semiconductors 2018. 2018.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2019-03-04 10:08:47 +0900更新時刻: 2019-03-04 10:08:47 +0900