Improvement of Strained InGaN Solar Cell Performance with a Heavily Doped n+-GaN Substrate
International workshop on nitride semiconductors. 2014.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-01-08 03:26:45 +0900更新時刻: 2017-07-10 22:05:45 +0900