HOME > Presentation > DetailImprovement of Strained InGaN Solar Cell Performance with a Heavily Doped n+-GaN Substrate角谷 正友, 本田徹, サン リウエン, 中野由崇, 長谷川文夫. International workshop on nitride semiconductors. 2014.NIMS author(s)SUMIYA, MasatomoSANG, LiwenFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 03:26:45 +0900Updated at: 2017-07-10 22:05:45 +0900