Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Masatomo Sumiya; Osamu Goto; Yuki Takahara; Yasutaka Imanaka; Liwen Sang; Noboru Fukuhara; Taichiro Konno; Fumimasa Horikiri; Takeshi Kimura; Akira Uedono; Hajime Fujikura; Masatomo Sumiya; Osamu Goto; Yuki Takahara; Yasutaka Imanaka; Liwen Sang; Noboru Fukuhara; Taichiro Konno; Fumimasa Horikiri; Takeshi Kimura; Akira Uedono; Hajime Fujikura

doi:10.35848/1347-4065/ace671

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Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Masatomo Sumiya, Osamu Goto, Yuki Takahara, Yasutaka Imanaka, Liwen Sang, Noboru Fukuhara, Taichiro Konno, Fumimasa Horikiri, Takeshi Kimura, Akira Uedono, Hajime Fujikura.

Japanese Journal of Applied Physics 62 [8] 085501. 2023.

https://doi.org/10.35848/1347-4065/ace671

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

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MDRavailable Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

作成時刻: 2023-08-05 03:27:37 +0900更新時刻: 2025-01-16 08:31:47 +0900