HOME > 論文 > 書誌詳細Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor applicationMasatomo Sumiya, Osamu Goto, Yuki Takahara, Yasutaka Imanaka, Liwen Sang, Noboru Fukuhara, Taichiro Konno, Fumimasa Horikiri, Takeshi Kimura, Akira Uedono, Hajime Fujikura. Japanese Journal of Applied Physics 62 [8] 085501. 2023.https://doi.org/10.35848/1347-4065/ace671 NIMS著者角谷 正友今中 康貴サン リウエンMaterials Data Repository (MDR)上の本文・データセット作成時刻: 2023-08-05 03:27:37 +0900更新時刻: 2024-04-28 03:04:47 +0900