Temperature-controlled epitaxy of In<sub><i>x</i></sub>Ga<sub>1-</sub><sub><i>x</i></sub>N alloys and their band gap bowing | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing
(Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing)

S. T. Liu, X. Q. Wang, G. Chen, Y. W. Zhang, L. Feng, C. C. Huang, F. J. Xu, N. Tang, L. W. Sang, M. Sumiya, B. Shen.

Journal of Applied Physics 110 [11] 113514. 2011.

https://doi.org/10.1063/1.3668111

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作成時刻: 2016-05-24 16:37:12 +0900更新時刻: 2024-03-31 12:37:19 +0900

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