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AlGaN/GaNヘテロ界面でのAlNインタ層の効果 ― 歪誘起欠陥形成の抑制による2DEG移動度の向上 ―
(Effect of AlN interlayer in AlGaN/GaN heterostructures on both the reduction of strain-induced defects in GaN channel and the improvement of two-dimensional carrier transport)
第86回応用物理学会秋季学術講演会. September 07, 2025-September 10, 2025.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2025-09-12 03:12:41 +0900 Updated at: 2025-09-12 03:12:41 +0900