HOME > 論文 > 書誌詳細Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatmentsBing Ren, Masatomo Sumiya, Yasuo Koide, Bing Ren, Meiyong Liao, Yue Shen, Xinke Liu, SUMIYA, Masatomo, LIAO, Meiyong, Liwen Sang, KOIDE, Yasuo, Xinke Liu, Yue Shen, SANG, Liwen. Journal of Alloys and Compounds 767 600-605. 2018.NIMS著者角谷 正友廖 梅勇小出 康夫サン リウエンMaterials Data Repository (MDR)上の本文・データセット作成時刻: 2021-03-08 20:12:21 +0900更新時刻: 2021-03-10 00:53:28 +0900
