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Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments

著者Bing Ren, Yue Shen, Xinke Liu, Masatomo Sumiya, Yasuo Koide, Bing Ren, Meiyong Liao, SUMIYA, Masatomo, LIAO, Meiyong, Liwen Sang, KOIDE, Yasuo, Xinke Liu, Yue Shen, SANG, Liwen.
掲載誌名Journal of Alloys and Compounds 767 600-605
ISSN: 09258388
ESIでのカテゴリ: MATERIALS SCIENCE
出版社Elsevier BV
発表年2018
言語English

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