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Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments

Bing Ren, Masatomo Sumiya, Yasuo Koide, Bing Ren, Meiyong Liao, Yue Shen, Xinke Liu, SUMIYA, Masatomo, LIAO, Meiyong, Liwen Sang, KOIDE, Yasuo, Xinke Liu, Yue Shen, SANG, Liwen.
Journal of Alloys and Compounds 767 600-605. 2018.

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    Created at: 2021-03-08 20:12:21 +0900Updated at: 2021-03-10 00:53:28 +0900

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