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Interface trap characterization of Al2O3/GaN MOS capacitors on GaN substrate with surface treatments

著者任 兵, Jian Huang, KOIDE, Yasuo, SUMIYA, Masatomo, Ke Tang, LIAO, Meiyong, Linjun Wang, SANG, Liwen.
会議名IWN2018
発表年2018
言語English

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