SAMURAI - NIMS Researchers Database

HOME > Presentation > Detail

Interface trap characterization of Al2O3/GaN MOS capacitors on GaN substrate with surface treatments

任 兵, Jian Huang, SUMIYA, Masatomo, KOIDE, Yasuo, Ke Tang, LIAO, Meiyong, Linjun Wang, SANG, Liwen.
IWN2018. November 11, 2018-November 16, 2018.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2019-03-04 10:09:00 +0900 Updated at: 2019-03-04 10:09:00 +0900

    ▲ Go to the top of this page