1. Zhendong Wu, Tetsuya Tohei, Yusuke Hayashi, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Junichi Takino, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai. Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach. Materials & Design. 263 115669-115669-12. 2026. Open Access
2. Satoshi Iida, Shigeki Hirose, Hironori Okumura, Kosuke Itabashi, Manabu Togawa, Masaya Miyahara, Masataka Imura, Keigo Urasaki. Characterization of gallium nitride-based particle detectors with p–n junction and low-gain avalanche diode structures. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1092 171788-171788-7. 2026. Open Access
3. Hideki T. Miyazaki, Takeshi Kasaya, Masahiro Saito, Kazuya Kimoto, Yutaro Tsuiki, Tetsuyuki Ochiai. Gas temperature measurement based on contrast reversal in mid-infrared CO ₂ images. Optics Express. 34 [11] 19701-19724. 2026. Open Access
4. M. Togawa, M. Imura, T. Isobe, K. Itabashi, M. Miyahara, J. Nishinaga, H. Okumura. A radiation tolerant particle detector with Cu(In,Ga)Se2. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1091 171749-171749-4. 2026. Open Access
5. Yoshiki Sakuma, Keisuke Atsumi, Takanobu Hiroto, Jun Nara, Akihiro Ohtake, Yuki Ono, Takashi Matsumoto, Yukihiro Muta, Kai Takeda, Emi Kano, Toshiki Yasuno, Xu Yang, Nobuyuki Ikarashi, Asato Suzuki, Michio Ikezawa, Shuhong Li, Tomonori Nishimura, Kaito Kanahashi, Kosuke Nagashio. Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics. Nature Communications. 17 [1] 602-1-602-10. 2026. Open Access
6. Masataka Imura, Yuichi Ota, Takeyoshi Onuma, Chikara Shinei. Electronic states of impurity centers in MgO single crystals under local cubic fields: an EPR study. Japanese Journal of Applied Physics. 65 [17] 173001-173001-11. 2026. Open Access
7. Ryohei Yamamoto, Yusuke Hayashi, Zhuo Diao, Tetsuya Tohei, Akira Sakai. A Four‐Terminal TiO _{2− x} Memristor Architecture Enabling Multidimensional Associative Learning. physica status solidi (a). 223 [17] e70507-1-e70507-8. 2026. Open Access
8. Ilario Bisignano, Po-Sheng Shih, Masataka Imura, Kuo-Ping Chen, Satoshi Ishii. High-Spatial-ResolutionNear-Infrared ThermographyUsing an Uncooled Silicon-Based Camera. ACS Photonics. 13 [17] 5139-5146. 2026.
9. Shuhong Li, Juiteng Chang, Keisuke Atsumi, Kosei Matsumoto, Itsuki Tanaka, Tomonori Nishimura, Kaito Kanahashi, Takahiro Nagata, Jun Nara, Yoshiki Sakuma, Emi Kano, Nobuyuki Ikarashi, Kosuke Nagashio. MOCVD‐Grown MoS ₂ Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering. Advanced Materials. 38 [45] e73931-1-e73931-9. 2026. Open Access
10. Zijie Meng, Ryohei Yamamoto, Hayato Kamitsuna, Yusuke Hayashi, Zhuo Diao, Tetsuya Tohei, Akira Sakai. Embedding Operant Conditioning Functions in a Four-Terminal Memristor. ACS Applied Electronic Materials. 5155-5161. 2026. Open Access
11. Zhongyunshen Zhu, Hridibrata Pal, Aditya Dev Varma, Masataka Imura, Hironori Okumura, Tomás Palacios. Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics. IEEE Electron Device Letters. 47 [6] 1077-1080. 2026. Open Access
12. Fuga Miyazawa, Masataka Imura, Hironori Okumura. Fully vertical AlN-on-SiC heterojunction diodes. Japanese Journal of Applied Physics. 65 [8] 080906-080906-6. 2026. Open Access
13. Masataka Imura, Takanobu Hiroto, Takaaki Mano, Yuri Itokazu, Masafumi Jo. Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control. Journal of Applied Physics. 139 [11] 115703-1-115703-12. 2026. Open Access
14. S. Chander, B.W. Grobecker, A.V. Poshakinskiy, S. Anghel, T. Mano, J.N. Moore, G. Yusa, M. Betz. Switching the persistent spin helix’s orientation in gate-controlled GaAs double quantum wells. Physical Review Applied. 25 [3] 034064-1-034064-8. 2026. Open Access
15. Hironori Okumura, Satoshi Iida, Shigeki Hirose, Kosuke Itabashi, Manabu Togawa, Masaya Miyahara, Jiro Nishinaga, Masataka Imura, Keigo Urasaki, Tadaaki Isobe. GaN radiation detectors with low-gain avalanche diode structure. Japanese Journal of Applied Physics. 65 [1] 016501-016501-7. 2026. Open Access
16. Akihiro Ohtake, Jun Nara, Yoshiki Sakuma. Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire. Journal of Applied Physics. 139 [2] 024303-1-024303-7. 2026. Open Access

2025

1. Zhendong Wu, Yusuke Hayashi, Tetsuya Tohei, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai. Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN. Journal of Applied Crystallography. 58 [4] S1600576725004169-1-S1600576725004169-15. 2025. Open Access
2. Nobuyuki Ishida, Takaaki Mano. Atomic-scale insights into carrier generation mechanism in Si-doped GaAs films grown on GaAs(111)A substrate. Applied Surface Science. 711 163920-163920-5. 2025. Open Access
3. Nicholaus Kevin Tanjaya, Takahiro Baba, Masataka Imura, Takao Mori, Satoshi Ishii. Thermal conductivity and thermo-optic coefficient measurements of transparent thin films using quantitative phase microscopy. Optics & Laser Technology. 182 112128-112128-6. 2025. Open Access
4. Emi Kano, Jun Nara, Koki Takenaka, Toshiki Yasuno, Keisuke Atsumi, Shuhong Li, Tomonori Nishimura, Kaito Kanahashi, Jun Uzuhashi, Kosuke Nagashio, Yoshiki Sakuma, Nobuyuki Ikarashi. Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy. Applied Physics Letters. 127 [25] 252102-1-252102-6. 2025. Open Access
5. Xu Yang, Markus Pristovsek, Shugo Nitta, Yoshio Honda, Akihiro Ohtake, Yoshiki Sakuma, Takanobu Hiroto, Takayuki Ishida, Michio Ikezawa, Qixin Guo, Hiroshi Amano. Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001). Advanced Science. 12 [46] e09354-1-e09354-11. 2025. Open Access
6. Yosuke Sasama, Takuya Iwasaki, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide. Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor. Applied Physics Letters. 127 [14] 143502-1-143502-6. 2025. Open Access
7. Ilario Bisignano, Masataka Imura, Nicholaus Kevin Tanjaya, Ming-Jyun Ye, Noriyuki Okada, Satoshi Ishii. Infrared Near-Field Spectroscopy of AlGaN/GaN Heterostructures for Probing Two-Dimensional Electron Gas. ACS Applied Materials & Interfaces. 17 [35] 50077-50084. 2025. Open Access
8. Koji Kimoto, Ovidiu Cretu, Koji Harano, Fumihiko Uesugi, Jun Kikkawa, Kohei Aso, Yoshifumi Oshima, Takashi Matsumoto, Yoshiki Sakuma. Unveiling Twist Domains in Monolayer MoS₂ through 4D‐STEM and Unsupervised Machine Learning. Small Methods. 9 [9] e01065-1-e01065-8. 2025. Open Access
9. Akihiro Shimada, Haruna Shiomi, Tetsuya Tohei, Yusuke Hayashi, Masaya Yamaguchi, Junpei Yamamoto, Takeaki Hamachi, Yasuhiko Imai, Kazushi Sumitani, Shigeru Kimura, Shota Kaneki, Tamotsu Hashizume, Akira Sakai. In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition. Journal of Applied Physics. 138 [7] 075701-1-075701-8. 2025. Open Access
10. Quentin France, Yunhyeon Jeong, Akinori Kamiyama, Takaaki Mano, Ken-ichi Sasaki, Masahiro Hotta, Go Yusa. Electrically Induced Bulk and Edge Excitations in the Fractional Quantum Hall Regime. Physical Review Letters. 135 [6] 066203-1-066203-6. 2025. Open Access
11. Takuya Kawazu. Schottky barrier lowering in n-AlGaAs/GaAs/AlGaAs double heterojunctions by local light illumination. Japanese Journal of Applied Physics. 64 [7] 075001-075001-6. 2025. Open Access
12. Zhao Ma, Takaaki Mano, Akihiro Ohtake, Takashi Kuroda. Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation. Journal of Applied Physics. 137 [24] 243102-1-243102-7. 2025. Open Access
13. Kohei Tuzuku, Masataka Imura, Hironori Okumura. Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification. Japanese Journal of Applied Physics. 64 [6] 066504-066504-6. 2025. Open Access
14. K. Itabashi, M. Togawa, J. Nishinaga, M. Miyahara, H. Okumura, M. Imura, T. Isobe. Development of high radiation tolerance detector with CIGS. Journal of Instrumentation. 20 [06] C06023-C06023-5. 2025. Open Access
15. Akihiro Ohtake, Yusuke Hayashi. Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures. Applied Physics Letters. 126 [20] 201601-1-201601-6. 2025. Open Access
16. B. W. Grobecker, A. V. Poshakinskiy, S. Anghel, T. Mano, G. Yusa, M. Betz. Enhancing spin diffusion in GaAs quantum wells: The role of electron density and channel width. Journal of Applied Physics. 137 [18] 183902-1-183902-7. 2025. Open Access
17. Shuhong Li, Ryotaro Otake, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe, Yoshiki Sakuma, Kosuke Nagashio. Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er₂O₃ Dielectrics on Two-Dimensional MoS₂ Field-Effect Transistors. ACS Materials Letters. 7 [5] 1993-2001. 2025. Open Access
18. Tomoyuki Horikawa, Yoshiyuki Tsusaka, Junji Matsui, Tetsuya Tohei, Yusuke Hayashi, Akira Sakai. Analyses of oxygen precipitates in CZ-Si by X-ray diffuse scattering using parallel X-ray beam. Japanese Journal of Applied Physics. 64 [4] 045502-045502-7. 2025. Open Access
19. Keyun Gu, Zilong Zhang, Takeo Ohsawa, Masataka Imura, Jian Huang, Yasuo Koide, Meiyong Liao. Photo-response performance regulation of a type-Ib diamond-based photodetector by H₂ annealing and ozone treatment. Journal of Materials Chemistry C. 13 [13] 6816-6822. 2025. Open Access
20. Nobuyuki Ishida, Takaaki Mano. Quantitative theoretical analysis of the electrostatic force between a metallic tip and semiconductor surface in Kelvin probe force microscopy. Nanotechnology. 36 [7] 075701-075701-8. 2025. Open Access
21. Yu Wang, Jun Nishida, Keiichi Nakamoto, Xu Yang, Yoshiki Sakuma, Wenjin Zhang, Takahiko Endo, Yasumitsu Miyata, Takashi Kumagai. Ultrafast Nano-Imaging of Spatially Modulated Many-Body Dynamics in CVD-Grown Monolayer WS₂. ACS Photonics. 12 [1] 207-218. 2025.

2024

1. Yuto Uematsu, Takaaki Mano, Akihiro Ohtake, Hideki T. Miyazaki, Takeshi Kasaya. Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas system. Nature Communications. 15 [1] 322. 2024. Open Access
2. Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. A high-performance deep reservoir computer experimentally demonstrated with ion-gating reservoirs. Communications Engineering. 3 [1] 81-1-81-12. 2024. Open Access
3. Kazuaki Sakoda, Yuanzhao Yao, Naoki Ikeda, Yoshimasa Sugimoto, Takaaki Mano, Takashi Kuroda, Hirotaka Tanimura, Shigeyuki Takagi, Rei Hashimoto, Kei Kaneko, Tsutomu Kakuno, Shinji Ohkuma, Ryuichi Togawa, Tetsuya Miyagawa, Hiroshi Ohno, Shinji Saito. Design and Characteristics of Photonic Crystal Resonators for Surface-Emitting Quantum Cascade Lasers. Photonics. 11 [11] 1024-1024-13. 2024. Open Access
4. K. Itabashi, M. Imura. Study of radiation tolerance of ${\mathrm{Cu(In,Ga)Se}}_2$ detector. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1067 169637-169637-2. 2024. Open Access
5. Raymond Benedict C. Dardo, Masataka Imura. X-ray Diffraction Line Profile Analysis of Natural Calcite Minerals found in Southern Philippines by Williamson-Hall Method. Journal of Engineering, Environment, and Agriculture Research. 3 [1] 29-37. 2024. Open Access
6. Zhao Ma, Takaaki Mano, Akihiro Ohtake, Takashi Kuroda. Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination. Japanese Journal of Applied Physics. 63 [12] 121002-121002-7. 2024. Open Access
7. Takuya Kawazu. Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction. AIP Advances. 14 [12] 125007-1-125007-5. 2024. Open Access
8. Akihiro Ohtake, Takaaki Mano, Takuya Kawazu. Arsenic-flux dependence of surface morphology in InAs homoepitaxy. Journal of Vacuum Science & Technology A. 42 [6] 062702-1-062702-8. 2024. Open Access
9. Shisheng Li, Yung‐Chang Lin, Yiling Chiew, Yunyun Dai, Zixuan Ning, Yaming Zhang, Hideaki Nakajima, Hong En Lim, Jing Wu, Yasuhisa Neitoh, Toshiya Okazaki, Yang Sun, Zhipei Sun, Kazu Suenaga, Yoshiki Sakuma, Kazuhito Tsukagoshi, Takaaki Taniguchi. 1D Crystallographic Etching of Few‐Layer WS₂. Advanced Functional Materials. 34 [46] 2405665-1-2405665-10. 2024. Open Access
10. Hironori Okumura, Masataka Imura, Fuga Miyazawa, Lorenzo Mainini. Fully vertical AlN-on-SiC Schottky barrier diodes. Japanese Journal of Applied Physics. 63 [10] 100903-100903-5. 2024. Open Access
11. Takayoshi Oshima, Masataka Imura, Yuichi Oshima. Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination. Applied Physics Express. 17 [8] 086501-086501-5. 2024. Open Access
12. Yuto Uematsu, Takaaki Mano, Akihiro Ohtake, Hideki T. Miyazaki, Takeshi Kasaya. Film Thermoelectric Generator of Multiple 2-D Electron Gas. IEEE Transactions on Electron Devices. 71 [8] 4834-4840. 2024. Open Access
13. Takaaki Mano, Akihiro Ohtake, Takashi Kuroda. Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots. physica status solidi (a). 221 [13] 2300767-1-2300767-13. 2024. Open Access
14. T. Hamachi, T. Tohei, Y. Hayashi, S. Usami, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction. Journal of Applied Physics. 135 [22] 225702-1-225702-10. 2024. Open Access
15. Hideki T. Miyazaki, Takaaki Mano, Takeshi Noda, Takeshi Kasaya, Yusuf B. Habibullah. Antenna-enhanced high-resistance photovoltaic infrared detectors based on quantum ratchet architecture. Applied Physics Letters. 124 [23] 231103-1-231103-7. 2024. Open Access
16. Masanobu Iwanaga, Xu Yang, Vasilios Karanikolas, Takashi Kuroda, Yoshiki Sakuma. 2D‐Material‐Fused High‐Emittance Plasmo–Photonic Metasurfaces. Advanced Optical Materials. 12 [17] 2303309-1-2303309-9. 2024. Open Access
17. M. Togawa, M. Imura. The CIGS semiconductor detector for particle physics. Journal of Instrumentation. 19 [05] C05042-C05042-5. 2024. Open Access
18. Akihiro Ohtake, Takaaki Mano. Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers. Japanese Journal of Applied Physics. 63 [3] 03SP10. 2024. Open Access
19. Nobuyuki Ishida, Takaaki Mano. Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM. Nanotechnology. 35 [6] 065708. 2024. Open Access
20. Yu Yamaguchi, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. Inverted input method for computing performance enhancement of the ion-gating reservoir. Applied Physics Express. 17 [2] 024501. 2024. Open Access
21. Masanobu Iwanaga, Xu Yang, Vasilios Karanikolas, Takashi Kuroda, Yoshiki Sakuma. Prominently enhanced luminescence from a continuous monolayer of transition metal dichalcogenide on all-dielectric metasurfaces. Nanophotonics. 13 [1] 95-105. 2024. Open Access

2023

1. Masakazu Morioka, Hideki T. Miyazaki. Relationship between surgical field contamination by patient's exhaled air and the state of the drapes during eye surgery. Scientific Reports. 13 [1] 5713. 2023.
2. Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Yasuo Koide. Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates. Nanomaterials. 13 [7] 1256. 2023. Open Access
3. 川村 史朗, ソン イェリン, 村田 秀信, 井村 将隆. Fabrication of the bandgap-tuned alkaline earth-alloyed SnS solar cell. Journal of the Ceramic Society of Japan. 131 [10] 708-711. 2023.
4. Akihiro Ohtake, Takayuki Suga. Atomic structure of the Se-passivated GaAs(001) surface revisited. Scientific Reports. 13 [1] 18140. 2023.
5. Afshan Begum, Yuanzhao Yao, Takashi Kuroda, Yoshihiko Takeda, Naoki Ikeda, Yoshimasa Sugimoto, Takaaki Mano, Kazuaki Sakoda. Design and Observation of Topological Band Gaps and Edge Modes of SOI Photonic Crystal Slabs in the Mid-Infrared Range. Journal of the Physical Society of Japan. 92 [11] 11402. 2023. Open Access
6. Xu Yang, Shisheng Li, Naoki Ikeda, Akihiro Ohtake, Yoshiki Sakuma. Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source. Applied Surface Science. 636 157756. 2023.
7. Takayuki Ishida, Yoshiki Sakuma. Demonstrating long-term stable optical coupling between single-mode optical fibers and well-defined energy photons emitted from nitrogen impurity centers in GaAs flakes. Japanese Journal of Applied Physics. 62 [11] 112003. 2023.
8. Jiro Nishinaga, Masataka Imura. Annealing effects on Cu(In,Ga)Se₂ solar cells irradiated by high-fluence proton beam. Japanese Journal of Applied Physics. 62 [SK] SK1014. 2023.
9. Akihiro Ohtake, Xu Yang. Fabrication of Lattice-Mismatched MoTe₂/MoSe₂ Heterostructures using Molecular-Beam Epitaxy. Crystal Growth & Design. 23 [7] 5001-5007. 2023.
10. Takuya Kawazu, Takaaki Mano, Yoshiki Sakuma. Conduction characteristics of n-InAs/n-GaAs heterojunctions with misfit dislocations. Japanese Journal of Applied Physics. 62 [7] 074001. 2023.
11. Takaaki Mano, Akihiro Ohtake, Takuya Kawazu, Hideki T. Miyazaki, Yoshiki Sakuma. Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface. ACS Applied Materials & Interfaces. 15 [24] 29636-29642. 2023.
12. Hironori Okumura, Masataka Imura. Degradation of vertical GaN diodes during proton and xenon-ion irradiation. Japanese Journal of Applied Physics. 62 [6] 064001. 2023. Open Access
13. Makoto Takayanagi, Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. Ultrafast-switching of an all-solid-state electric double layer transistor with a porous yttria-stabilized zirconia proton conductor and the application to neuromorphic computing. Materials Today Advances. 18 100393. 2023.
14. Akinori Kamiyama, Takaaki Mano. Dynamics of the fractional quantum Hall edge probed by stroboscope measurements of trions. Applied Physics Letters. 122 [20] 202103. 2023.
15. J. N. Moore, T. Mano. Thermal transport imaging in the quantum Hall edge channel. Europhysics Letters. 142 [1] 16004. 2023.
16. Afshan Begum, Yuanzhao Yao, Takashi Kuroda, Yoshihiko Takeda, Naoki Ikeda, Yoshimasa Sugimoto, Takaaki Mano, Kazuaki Sakoda. Topological band gaps and edge modes materialized by symmetric silicon-on-insulator photonic crystal slabs in the mid-IR range. Physical Review A. 107 [4] 043507. 2023.
17. Makoto Takayanagi, Takashi Tsuchiya, Daiki Nishioka, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. Accelerated/decelerated dynamics of the electric double layer at hydrogen-terminated diamond/Li+ solid electrolyte interface. Materials Today Physics. 31 101006. 2023.

1. 黒田 隆, 間野 高明. 量子ドット単一光子源とは. 量子ドット技術の最前線. 2025. Open Access
2. 間野 高明, 大竹 晃浩. 液滴エピタキシー法による量子ドットの作製技術. 量⼦ドット技術の最前線. 2025. Open Access

1. 前川 紘億, Jui-Teng Chang, 西村 知紀, 金橋 魁利, SAKUMA, Yoshiki, 長汐 晃輔. Formation of stable HfO2/MoS2 interfaces by off-axis e-beam evaporation under controlled O2 partial pressure. SSDM 2026 (2026 International Conference on Solid State Devices and Materials). 2026.
2. 松本 昂征, 渥美 圭脩, 西村 知紀, 金橋 魁利, SAKUMA, Yoshiki, 長汐 晃輔. Quantifying Sulfur Defects during the MOCVD Growth of MoS2 by Atomic-Resolution Lateral Force Microscopy. SSDM 2026 (2026 International Conference on Solid State Devices and Materials). 2026.
3. 渥美 圭脩, 西村 知紀, 金橋 魁利, 岡田 直也, 入沢 寿史, SAKUMA, Yoshiki, 長汐 晃輔. Competition between Strain Enhancement and Short-Channel-Related Degradation in Short-Channel FETs with MOCVD-Grown Single-Crystalline MoS2. SSDM 2026 (2026 International Conference on Solid State Devices and Materials). 2026.
4. Emi Kano, NARA, Jun, Keisuke Atsumi, Shuhong Li, Tomonori Nishimura, Kaito Kanahashi, UZUHASHI, Jun, Kosuke Nagashio, SAKUMA, Yoshiki, Nobuyuki Ikarashi. Atomic resolution analysis of highly oriented MoS2/sapphire interface. 2026 International Conference on Solid State Devices and Materials. 2026.
5. 久々湊 優菜, 寺田 吏, 石部 貴史, 間野 高明, 中村 芳明. AlGaAs/GaAs量子井戸における二次元正孔ガスの熱電特性. 2026年 第87応用物理学会秋季学術講演会. 2026.
6. 佐久間 芳樹. 単層MoS2の自己整合・自己制限型ファンデルワールスエピタキシー. 第87回応用物理学秋季学術講演会. 2026. 招待講演
7. 間野 高明, 大竹 晃浩, キューレッシュ ニキーター, ボリャーチキン アントーン, 門平 卓也, 石田 暢之, 林 侑介, 黒田 隆. 高Al組成メタモルフィックInAlAs/GaAs(111)A上の InAs量子ドットの自己形成. 2026年 第87応用物理学会秋季学術講演会. 2026.
8. 前田 凪, 宮崎 英樹, 間野 高明, 柴田 憲治, 黒山 和幸, 平川 一彦. 半導体超格子-THz共振器の結合構造のデザインと素子作製. 2026年 第87応用物理学会秋季学術講演会. 2026.
9. 山口 真徳, 田中 一樹, 金橋 魁利, 西村 知紀, 中嶋 まい, 麻生 浩平, 大島 義文, 佐久間 芳樹, 長汐 晃輔. ReポストドーピングによるMoS2の高濃度n型原子置換. 第87回応用物理学春季学術講演会. 2026.
10. 黒田 隆, 間野 高明, 迫田 和彰. 通信波長帯液滴エピタキシー成長量子ドットの光子相関. 2026年 第87回応用物理学会秋季学術講演会. 2026.
11. 渥美 圭脩, 西村 知紀, 金橋 魁利, 佐久間 芳樹, 長汐 晃輔. コンタクト金属誘起引張歪みによるMoS2局所チャネル移動度186 cm2/Vsへの向上. 第87回応用物理学秋季学術講演会. 2026.
12. 林 侑介, 大竹 晃浩, 間野 高明. III-V{111}配向量子もつれ光源に向けた GaAs(111)Bジャスト基板上GaAs/AlGaAs分布ブラッグ反射鏡の成長. 2026年 第87回応用物理学会秋季学術講演会. 2026.
13. 井村 将隆, 廣戸 孝信, 大島 孝仁, 間野 高明, ザオ ウェン, 廖 梅勇, 糸数 雄吏, 定 昌史, 森 建紀, Zhang Ya. 格子整合AlxIn1–xN犠牲層を用いたサファイア基板上GaN MEMS共振子の作製と高Q動作. 2026年 第87回応用物理学会秋季学術講演会. 2026.
14. 大竹 晃浩, 間野 高明, 石田 暢之, 三石 和貴, 林 侑介, 山岸 佑真, 中村 淳. 極性制御されたGaAs/Ge/GaAs{111}構造におけるバンドオフセット. 2026年 第87回応用物理学会秋季学術講演会. 2026.
15. 松本 昂征, 西村 知紀, 金橋 魁利, 佐久間 芳樹, 長汐 晃輔. LFMによる単層MoS2のリップル起因摩擦異方性ドメイン解析と結晶方位可視化. 第87回応用物理学秋季学術講演会. 2026.
16. 林 侑介, 佐々木 拓生. その場X線回折によるGaN上AlN薄膜の結晶トランケーションロッド散乱測定. 2026年 第87回応用物理学会秋季学術講演会. 2026.
17. 渥美 圭脩, 西村 知紀, 金橋 魁利, 岡田 直也, 入沢 寿史, 佐久間 芳樹, 長汐 晃輔. 短チャネルFET集積化に向けたコンタクト金属誘起引張歪みによるMoS2の伝導度向上. 第87回応用物理学秋季学術講演会. 2026.
18. Yunhyeon Jeong, Akinori Kamiyama, John Nicholas Moore, MANO, Takaaki, Ken-ichi Sasaki, Yuuki Sugiyama, Tokiro Numasawa, Masahiro Hotta, Go Yusa. Optical Signature of Edge Magnetoplasmon Near-Fields in the Fractional Quantum Hall Regime. The International Conference on the Physics of Semiconductors 2026. 2026.
19. Sergiu Anghel, Sonia Chander, Ben Werner Grobecker, Alexander Poshakinskiy, MANO, Takaaki, John Nicholas Moore, Go Yusa, Markus Betz. Tuning the Persistent Spin Helix Orientation via Dual-Gate Control in GaAs Quantum Wells. The International Conference on the Physics of Semiconductors 2026. 2026. 招待講演
20. Ben Werner Grobecker, Alexander V. Poshakinskiy, Sergiu Anghel, MANO, Takaaki, Go Yusa, Markus Betz. Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width. The International Conference on the Physics of Semiconductors 2026. 2026.
21. Sergiu Anghel, Sonia Chander, Ben W. Grobecker, Alexander V. Poshakinskiy, MANO, Takaaki, John N. Moore, Go Yusa, Markus Betz. ELECTRICAL CONTROL OF PERSISTENT SPIN HELIX ORIENTATION IN DUAL-GATED GaAs QUANTUM WELLS. 10th International Symposium on Optical Materials (IS-OM10). 2026.
22. 木本 浩司, コレツ オヴィヂュ, 原野 幸治, 吉川 純, 上杉 文彦, 大島 義文, 麻生 浩平, 佐久間 芳樹. 電子顕微鏡の知識を組み入れた教師無し機械学習と4D-STEM. 日本顕微鏡学会　第82回学術講演会. 2026.
23. MANO, Takaaki, ISHIDA, Nobuyuki, KAWAZU, Takuya, OHTAKE, Akihiro, MIYAZAKI, Hideki. Origin of low dark current operation of InAs/GaAs(111)A infrared detectors: Effects of residual impurities on GaAs substrates. Compound Semiconductor Week 2026 (CSW2026). 2026.
24. ISHIDA, Nobuyuki, KAWAZU, Takuya, OHTAKE, Akihiro, MANO, Takaaki. Direct quantitative visualization of band profile across III-V devices using Kelvin probe force microscopy. Compound Semiconductor Week 2026 (CSW2026) . 2026.
25. HAYASHI, Yusuke, OHTAKE, Akihiro, MANO, Takaaki. Growth of GaAs/AlGaAs Distributed Bragg Reflectors on GaAs(111)B for {111}-Oriented Quantum Dot Photonic Structures. Compound Semiconductor Week 2026 (CSW 2026). 2026.
26. N. Maeda, MIYAZAKI, Hideki, MANO, Takaaki, N. Nagai, K. Kuroyama, K. Hirakawa. Design and Fabrication of THz Resonator-Semiconductor Superlattice Coupled Systems. Compound Semiconductor Week 2026 (CSW2026). 2026.
27. BISIGNANO, Ilario, IMURA, Masataka, OKADA, Noriyuki, ISHII, Satoshi. Direct Nanoscale Visualization of 2D Electron Gases in AlGaN/GaN Heterostructures. Optics & Photonics International Congress 2026 (OPIC 2026). 2026.
28. 鄭潤賢, John N. Moore, 堀田昌, 間野 高明, 遊佐剛. ポテンシャル空間勾配による局在エッジ状態の長距離変形. 日本物理学会2026年春季大会. 2026.
29. 鰈貴 太貴, 鄭 潤賢, John Nicholas Moore, 間野 高明, 堀田 昌寛, 高柳 匡, 遊佐 剛. アナログワームホールに向けた量子ホールバルク・エッジ励起. 日本物理学会2026年春季大会. 2026.
30. 前川 紘億, 西村 知紀, 金橋 魁利, 佐久間 芳樹, 長汐 晃輔. オフアクシス選択堆積による単層MoS2上HfO2堆積手法の確立. 第73回応用物理学春季学術講演会. 2026.
31. 渥美 圭脩, 西村 知紀, 金橋 魁利, SAKUMA, Yoshiki, 長汐 晃輔. Analysis of Channel-Length Dependent Transport under Constant Electric Field Conditions with MOCVD-Grown Single-crystalline Monolayer MoS2 FETs. APS Global Physics Summit. 2026.
32. 間野 高明, 大竹 晃浩, キューレッシュ ニキーター, ボリャーチキン アントーン, 門平 卓也, 林 侑介, 黒田 隆. 液滴エピタキシー法による(111)A面上の低密度・高対称 InAs量子ドットの自己形成. 第73応用物理学会春季学術講演会. 2026.
33. 張 睿騰, 李 曙紅, 松本 昂征, 前川 紘億, 西村 知紀, 金橋 魁利, SAKUMA, Yoshiki, NAGATA, Takahiro, 長汐 晃輔. Transfer-free top-gate MoS2 FETs using MOCVD-MoS2 wafers. 第73回応用物理学会春季学術講演会. 2026.
34. 松本 昂征, 西村 知紀, 金橋 魁利, 佐久間 芳樹, 長汐 晃輔. 摩擦力顕微鏡原子分解能観察による MOCVD-MoS2成膜過程の S 欠陥定量評価. 第73回応用物理学春季学術講演会. 2026.
35. Taito Masuda, ZENG, Fanyu, ヌルルファリハビンチ アマド, CHOUHAN, Lata, カンデルワル アスタ, KITAURA, Ryo, Toshimasa Ishii, Kosuke Nagashio, SAKUMA, Yoshiki, Hideo Kishida, Takeshi Koyama. Ultrafast photoluminescence of monolayer MoS2 in field-effect transistor. 第70回記念フラーレン・ナノチューブ･グラフェン総合シンポジウム. 2026.

2025

1. Satoshi Iida, Hironori Okumura, Keigo Urasaki, Kosuke Itabashi, Manabu Togawa, IMURA, Masataka, Masaya Miyahara, Shigeki Hirose. Characterization of gallium-nitride-based particle detectors with pn-junction and low-gain avalanche diode structures. The 14th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD 14). 2025.
2. 木本 浩司, コレツ オヴィヂュ, 原野 幸治, 上杉 文彦, 吉川 純, 佐久間 芳樹, 麻生 浩平, 大島 義文. 4D-STEMのための電顕知識を備えた教師なし機械学習. 日本顕微鏡学会第68回シンポジウム. 2025.
3. SAKUMA, Yoshiki, HIROTO, Takanobu, NARA, Jun, OHTAKE, Akihiro, 小野 祐樹, 松本 貴士. Grain Boundary-mediated Self-aligned Single Crystallization of MoS2 Monolayers on Sapphire Substrates in MOCVD. RPGR 2025 (The 16th International Conference on Recent Progress in Graphene and 2D Materials Research). 2025.
4. J. Chang, S. Li, H. Maekawa, T. Nishimura, SAKUMA, Yoshiki, NAGATA, Takahiro, K. Nagashio. Interface Engineering of MOCVD-Grown MoS2 on Sapphire for High On/Off Ratio FETs. The 16th International Conference on Recent Progress in Graphene and 2D Materials Research (RPGR2025). 2025.
5. OHTAKE, Akihiro, NARA, Jun, SAKUMA, Yoshiki. Epitaxial orientation of monolayer MoS2(0001) on sapphire. RPGR 2025 (The 16th International Conference on Recent Progress in Graphene and 2D Materials Research). 2025.
6. H. Maekawa, J.-T. Chang, S. Li, T. Nishimura, K. Kanahashi, SAKUMA, Yoshiki, NAGATA, Takahiro, K. Nagashio. Reaction of MoS2 with stacked high-k dielectrics. The 16th International Conference on Recent Progress in Graphene and 2D Materials Research (RPGR2025). 2025.
7. 佐久間 芳樹. MOCVD法によるMoS2単層膜のウエハスケールvan der Waalsエピタキシーの開発. シリコン材料・デバイス研究会（SDM）. 2025. 招待講演
8. 大澤 俊郎, NAGATA, Takahiro, SAKUMA, Yoshiki, 竹澤 伸吾, 小嗣 真人, NAGAMURA, Naoka. MBE growth and characterization of ultrathin Bi films on monolayer MOCVD-MoS2. 2025年 日本表面真空学会学術講演会. 2025.
9. 飯田 哲, 廣瀬 茂輝, 奥村 宏典, 板橋 浩介, 外川 学, 宮原 正也, 井村 将隆, 浦崎 圭吾. 窒化ガリウム製 LGAD 検出器の荷電粒子に対する応答評価. 日本物理学会第80回年次大会. 2025.
10. 渥美 圭脩, 李 曙紅, 西村 知紀, 金橋 魁利, SAKUMA, Yoshiki, 長汐 晃輔. Elucidation of Hidden Grain-Boundary Effects in MOCVD MoS2 Films via Single-Grain device and ultra-short channel TLM. SSDM 2025 (International Conference on Solid State Devices and Materials). 2025.
11. B. W. Grobecker, A. V. Poshakinskiy, S. Anghel, MANO, Takaaki, G. Yusa, M. Betz. Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width. 17th International Conference on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS). 2025.
12. 西村 知紀, 李 曙紅, 大竹 亮太郎, 渥美 圭脩, 佐久間 芳樹, 長田 貴弘, 金橋 魁利, 長汐 晃輔. サファイア基板上単層MoS2へのレジストフリー界面ゲートスタック形成. 2025年 第86回応用物理学会秋季学術講演会. 2025.
13. 佐久間 芳樹, 廣戸 孝信, 奈良 純, 大竹 晃浩, 小野 祐樹, 松本 貴士. 結晶粒界を介したサファイア基板上の単層MoS2に自己配列単結晶化. 第86回応用物理学会秋季学術講演会. 2025.
14. 佐久間 芳樹, 廣戸 孝信, 奈良 純, 小野 祐樹, 松本 貴士. MOCVD法によるc面サファイア基板上MoS2単層膜の自己停止成長. 第86回応用物理学会秋季学術講演会. 2025.
15. 大竹 亮多郎, 李 曙紅, 西村 知紀, 金橋 魁利, 佐久間 芳樹, 長汐 晃輔. MoS2 ウエハー上high-k 堆積で理想的な界面形成は可能か？. 第86回応用物理学会秋季学術講演会. 2025.
16. 長田 貴弘, 佐久間 芳樹, 小畠 雅明, 福田 竜生, 西村 知紀, 李 曙紅, 張 睿騰, 渥美 圭脩, 金橋 魁利, 長汐 晃輔. 温度可変/多エネルギー光電子分光法による単層MoS2/サファイア構造の結合・電子状態評価. 2025年 第86回応用物理学会秋季学術講演会. 2025.
17. 宮崎 英樹, 笠谷 岳士, 齋藤 正浩, 木本 一也, 對木 雄太朗, 落合 哲行. 狭帯域赤外カメラを用いたガス温度計測. 第86回応用物理学会秋季学術講演会. 2025. Open Access
18. 狩野 絵美, 奈良 純, 安野 寿輝, 田中 怜多, 楊 旭, 渥美 圭脩, 李 曙紅, 長汐 晃輔, 佐久間 芳樹, 五十嵐 信行. 高配向MoS₂/サファイア界面における積層構造のTEM解析. 第86回応用物理学会秋季学術講演会. 2025.
19. 大竹 晃浩, 林 侑介, 間野 高明. GaAs/Ge/GaAs{111}ヘテロ構造における極性制御. 2025年第86回応用物理学会秋期学術講演会. 2025.
20. MA, Zhao, MANO, Takaaki, OHTAKE, Akihiro, KURODA, Takashi. Effects of surface reconstructions on the photoluminescence properties of buried InGaAs/GaAs quantum well after air exposure. 第86回応用物理学会秋季学術講演会. 2025.
21. 宮沢 風我, 奥村 宏典, 井村 将隆. 高濃度 Mg 添加 AlN 層の高温下での電気特性評価. 第86回応用物理学会秋季学術講演会. 2025.
22. NARA, Jun, OHTAKE, Akihiro, SAKUMA, Yoshiki. Rumpling structure of Al2O3 surface caused by the coulomb interaction in MoS2/Al2O3 system. The 38th European Conference on Surface Science (ECOSS 38). 2025.
23. ISHIDA, Nobuyuki, KAWAZU, Takuya, OHTAKE, Akihiro, MANO, Takaaki. Operando band visualization of III-V infrared sensor using UHV-KPFM. The 26th International Conference on Non-contact Atomic Force Microscopy (NC-AFM 2025). 2025.
24. HAYASHI, Yusuke, Kouto Tamamizu, Taisuke Ota, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano. Microscopic Raman study of GaN p―n junction diodes grown on OVPE GaN substrates. 15th International Conference on Nitride Semiconductors (ICNS-15). 2025.
25. Hironori Okumura, Satoshi Iida, Shigeki Hirose, Kosuke Itabashi, Manabu Togawa, Masaya Miyahara, Tadaaki Isobe, Keigo Urasaki, Jiro Nishinaga, IMURA, Masataka. GaN radiation detectors with low-gain avalanche diode structure. The 15th International Conference on Nitride Semiconductors (ICNS-15). 2025.
26. 安野 寿輝, 狩野 絵美, 田中 怜多, 楊 旭, 渥美 圭脩, 李 曙紅, 長汐 晃輔, 佐久間 芳樹, 五十嵐 信行. MOCVD-MoS2/sapphireの結晶方位原子分解能TEM解析. 日本顕微鏡学会 第81回学術講演会. 2025.
27. BISIGNANO, Ilario, IMURA, Masataka, OKADA, Noriyuki, ISHII, Satoshi. Infrared nanophotonic spectroscopy of AlGaN/GaN heterostructures. The 11th International Conference on Surface Plasmon Photonics (SPP 11). 2025.
28. SASAMA, Yosuke, IWASAKI, Takuya, MOHAMMAD, Monish, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, YAMAGUCHI, Takahide. High-mobility diamond field-effect transistors utilizing a hexagonal boron nitride gate insulator. The 2nd International Conference on Advanced Functional Materials (ICAFM 2025 KATHMANDU). 2025. 招待講演
29. 飯田 哲, 廣瀬 茂輝, 奥村 宏典, 板橋浩介, 外川 学, 宮原 正也, 井村 将隆, 浦崎 圭吾. 窒化ガリウム半導体を用いたピクセル検出器の特性評価. 日本物理学会 2025年春季大会. 2025.
30. 渥美 圭脩, 李 曙紅, 西村 知紀, 金橋 魁利, 佐久間 芳樹, 長汐 晃輔. MOCVD成膜したMoS2極小単一粒のデバイス特性評価. 第72回応用物理学会春季学術講演会. 2025.
31. 西永 慈郎, 上川 由紀子, 外川 学, 板橋 浩介, 宮原 正也, 浦崎 圭吾, 井村 将隆, 石塚 尚吾. CIGS放射線検出器に向けた高並列抵抗化および厚膜化技術. 2025年第72回応用物理学会春季学術講演会. 2025.
32. 吉崎 高士, 上松 悠人, 石部 貴史, 間野 高明, 大竹 晃浩, 山下 雄一郎, 上沼 睦典, 中村 芳明. 2 次元電子ガス積層構造を用いた熱伝導率低減とデバイス出力向上. 2025年 第72回応用物理学会春季学術講演会. 2025.
33. 奥村 宏典, 飯田 哲, 廣瀬 茂輝, 板橋 浩介, 外川 学, 宮原 正也, 磯部 忠昭, 井村 将隆, 西永 慈郎, 浦崎 圭吾. LGAD構造を用いたGaNピクセル粒子位置検出器の作製. 2025年第72回応用物理学会春季学術講演会. 2025.
34. 西岡 大貴, 並木 航, 髙栁 真, 井村 将隆, 小出 康夫, 樋口透, 寺部 一弥, 土屋 敬志. 固体電気二重層型イオンゲーティングリザバーによる神経様情報処理とカオスの縁学習. 2025年 第72回応用物理学会春季学術講演会. 2025. 招待講演
35. 間野 高明, 石田 暢之, 川津 琢也, 大竹 晃浩, 宮崎 英樹. InAs/GaAs(111)A赤外検出器の動作機構：GaAs基板表面の影響. 2025年 第72回応用物理学会春季学術講演会. 2025.
36. 林 正桓, 成澤 功喜, Encomendero Jimy, Xing Huili (Grace), Jena Debdeep, 林 侑介, 三宅 秀人, 宮本 恭幸. pコンタクト層の無い2DHG GaN 構造のFET動作. 2025年第72回応用物理学会春季学術講演会. 2025.
37. 西田 純, Wang Yu, 楊 旭, 佐久間 芳樹, 熊谷 崇. 化学気相成長単層WS2 における局所赤外ダイナミクス. 第72回応用物理学会春季学術講演会. 2025.
38. 宮崎 英樹, 笠谷 岳士, 木本 一也, 對木 雄太朗, 豊島 慶大, 齋藤 正浩, 落合 哲行. 狭帯域赤外カメラを用いた二酸化炭素ガス排出量の計測. 2025年第72回応用物理学会春季学術講演会. 2025. Open Access
39. HAYASHI, Yusuke, Tetsuya Tohei, Zexuan Zhang, Huili (Grace) Xing, Debdeep Jena, Yongjin Cho, Hideto Miyake, Akira Sakai. Microstructures of MBE-Grown AlN on N-polar Sputtered and Annealed AlN templates. 透明酸化物光・電子材料研究会 第11回研究会 & 意見交換会. 2025.

2024

1. ISHIDA, Nobuyuki, MANO, Takaaki. Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy. NIMS Award Symposium 2024. 2024.
2. HAYASHI, Yusuke, 藤平哲也, 隅谷和嗣, 今井康彦, 木村滋, 宇佐美茂佳, 今西正幸, 森勇介, 分島彰男, 渡邉浩崇, 新田州吾, 本田善央, 天野浩, 酒井朗. In situ nanobeam X-ray diffraction of vertical power devices grown on OVPE-GaN substrates. 12th International Workshop on Nitride Semiconductors (IWN 2024). 2024.
3. IMURA, Masataka, HIROTO, Takanobu, MANO, Takaaki, 糸数 雄吏, 定 昌史. Simple Metal-Organic Vapor Phase Epitaxy Model Towards Improvement of Controllability of InxGa1-xN Alloy Composition. International Workshop on Nitride Semiconductors (IWN2024). 2024.
4. IMURA, Masataka, OSHIMA, Takayoshi, OSHIMA, Yuichi. Fabrication of reverse tapered GaN edge structures for positive beveled edge termination. International Workshop on Nitride Semiconductors (IWN2024). 2024.
5. Ryan G. Banal, Rommel J. Jagus, IMURA, Masataka. Assessment of Natural Calcite Minerals Found in Southern Philippines. International Conference on Materials Science and Engineering in the Philippines (ICMSEP 2024), International Conference on Microscopy and Microanalysis (ICMM 2024), and Regional Conference on Mining, Metallurgical (RCME 2024), and Materials Engineering (RCMMME 2024). 2024.
6. ISHIDA, Nobuyuki, MANO, Takaaki. Quantitative electrostatic potential measurement on III-V semiconductor devices using Kelvin probe force microscopy with qPlus sensor AFM. 10th International Symposium on Surface Science (ISSS-10). 2024.
7. IMURA, Masataka, HIROTO, Takanobu, MANO, Takaaki, 糸数 雄吏, 定 昌史. Rate-Equation Growth Model of Metal-Organic Vapor Phase Epitaxy Towards Improvement of Controllability of InxGa1-xN Alloy Composition. 第43回電子材料シンポジウム. 2024.
8. 大島 孝仁, 井村 将隆, 大島 祐一. 格子整合AlInN上GaNの逆テーパー型メサ形成の検討. 第85回応用物理学会秋季学術講演会. 2024.
9. 小野 佑樹, 佐久間 芳樹, 松本 貴士, 山田 浩樹. MoS2層数制御に向けたモリブデンプリカーサの特徴と選択. 第85回応用物理学会秋季学術講演会. 2024.
10. 鈴木 諒人, 佐久間 芳樹, 池沢 道男. MOCVD法で成膜した高配向MoS2単層膜のSHG観測. 第85回応用物理学会秋季学術講演会. 2024.
11. 井村 将隆, 廣戸 孝信, 間野 高明, 糸数 雄吏, 定 昌史. InxGa1-xN混晶組成の制御性向上のための単純なMOVPE成長モデルの構築. 第85回応用物理学会秋季学術講演会. 2024.
12. 狩野 絵美, 安野 寿輝, 楊 旭, 佐久間 芳樹, 五十嵐 信行. MOCVD-MoS2/sapphireの結晶方位に界面層が与える影響のTEM解析. 第85回応用物理学会秋季学術講演会. 2024.
13. 鄭 潤賢, 堀田 昌寛, 間野 高明, 遊佐 剛. 膨張する量子ホールエッジの時空構造. 日本物理学会第79回年次大会. 2024.
14. 宮沢 風我, 奥村 宏典, 井村 将隆. Mg添加AlN層上のNi電極の高温熱処理による接触抵抗低減. 第85回応用物理学会秋季学術講演会. 2024.
15. 佐久間 芳樹, 廣戸 孝信, 奈良 純, 小野 佑樹, 松本 貴士. vdWエピタキシーによるサファイア基板上MoS2の面内配向メカニズム. 第85回応用物理学会秋季学術講演会. 2024.
16. MANO, Takaaki, OHTAKE, Akihiro, MA, Zhao, KURODA, Takashi. Self-assembly of highly symmetric InAs quantum dots with low-density on InP (111)A substrates by droplet epitaxy. The 23rd International Conference on Molecular-Beam Epitaxy. 2024.
17. OHTAKE, Akihiro, MANO, Takaaki, 中川大輔, 中村淳. Structure and stability of the Se-treated GaAs(001) surface. The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024). 2024.
18. 渥美 圭脩, 李 曙紅, 西村 知紀, 金橋 魁利, Vincent Tung, SAKUMA, Yoshiki, 長汐 晃輔. Thermal-activation-type electron transport behavior in MOCVD MoS2 film. SSDM2024 (2024 International Conference on Solid State Devices and Materials). 2024.
19. 李 曙紅, 渥美 圭脩, 西村 知紀, 金橋 魁利, SAKUMA, Yoshiki, 長汐 晃輔. Why does everyone transfer MoS2 grown on sapphire to a Si substrate?-Interaction between MoS2/sapphire-. SSDM2024 (2024 International Conference on Solid State Devices and Materials). 2024.
20. Y. Jeong, M. Hotta, MANO, Takaaki, G. Yusa. Deformation and Dynamics of Excitations of Quantum Hall Edges. 36th International Conference on the Physics of Semiconductors (ICPS) 2024. 2024.
21. SAKUMA, Yoshiki. Wafer-Scale vdW Epitaxy of MoS2 by MOCVD using MoO2Cl2 Precursor. 2024 AEFM: Advanced Epitaxy for Freestanding Membranes and 2D Materials. 2024. 招待講演
22. 渥美 圭脩, 李 曙紅, 西村 知紀, 金橋 魁利, Vincent Tung, SAKUMA, Yoshiki, 長汐 晃輔. Wafer scale evaluation and device fabrication of MoS2 film grown by MOCVD. 2024 AEFM: Advanced Epitaxy for Freestanding Membranes and 2D Materials. 2024.
23. 楊 旭, SAKUMA, Yoshiki. Unlocking the technology of wafer-scale layered atomic crystals growth on dielectric substrates for electronic and photonic applications. META 2024 The 14th International Conference on Metamaterials, Photonic Crystals and Plasmonics. 2024. 招待講演
24. AFSHAN BEGUM, Afshan Begum, 姚 遠昭, KURODA, Takashi, TAKEDA, Yoshihiko, IKEDA, Naoki, MANO, Takaaki, SAKODA, Kazuaki. Mid-infrared topological edge modes in the symmetric and asymmetric photonic crystal slabs fabricated in SOI wafers. META 2024 (14th International Conference on Metamaterials, Photonic Crystals and Plasmonics). 2024. 招待講演
25. IWANAGA, Masanobu, 楊 旭, カラニコラス ヴァシレイオス, KURODA, Takashi, SAKUMA, Yoshiki. Hundred- to thousand-fold enhanced luminescence and the quantum nature manifested in continuous 2D materials coupled with metasurfaces. META 2024, The 14th International Conference on Metamaterials, Photonic Crystals and Plasmonics. 2024.
26. 安野 寿輝, 佐久間 芳樹. 単層MoS2の結晶粒界の原子分解能構造解析. 日本顕微鏡学会 第80回学術講演会. 2024.
27. AFSHAN BEGUM, Afshan Begum, YAO Yuanzhao, KURODA, Takashi, IKEDA, Naoki, SUGIMOTO, Yoshimasa, TAKEDA, Yoshihiko, MANO, Takaaki, SAKODA, Kazuaki. Topological edge modes in symmetric photonic crystal slabs. The 21st International Symposium on the Physics of Semiconductors and Applications (ISPSA 2024) . 2024. 招待講演
28. SASAMA, Yosuke, IWASAKI, Takuya, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, YAMAGUCHI, Takahide. Field-effect transistor based on CVD-grown diamond utilizing h-BN gate insulator. 17th International Conference on New Diamond and Nano Carbons (NDNC) 2024. 2024.
29. AFSHAN BEGUM, Afshan Begum, YAO Yuanzhao, KURODA, Takashi, TAKEDA, Yoshihiko, IKEDA, Naoki, SUGIMOTO, Yoshimasa, MANO, Takaaki, SAKODA, Kazuaki. Large and Complete Topological Bandgaps with Edge modes in Symmetric SOI Photonic Crystal Slabs. The IEEE Silicon Photonics Conference 2024. 2024.
30. 李 曙紅, 佐久間 芳樹. NA. 第71回応用物理学会春季学術講演会. 2024.
31. 笹間 陽介, 岩崎 拓哉, 井村 将隆, 渡邊 賢司, 谷口 尚, 山口 尚秀. CVD成膜したダイヤモンド上に作製したh-BNゲート絶縁体を用いた電界効果トランジスタ. 2024年第71回応用物理学会春季学術講演会. 2024.
32. 渥美 圭脩, 佐久間 芳樹. MOCVD成長によるウエハスケールMoS2 FETの特性評価. 第71回応用物理学会春季学術講演会. 2024.
33. 大島 孝仁, 井村 将隆, 大島 祐一, 大石 敏之. GaN正ベベル終端形成のための選択成長結晶に対する逆テーパーエッチングの提案. 2024年 第71回応用物理学会春季学術講演会. 2024.
34. 上松 悠人, 間野 高明, 大竹 晃浩. 二次元電子ガスにおけるサブバンド数が 熱電出力因子に与える影響. 第71回応用物理学会春季学術講演会. 2024.
35. MA, Zhao, MANO, Takaaki, OHTAKE, Akihiro, KURODA, Takashi. Effects of surface treatments on the photoluminescence intensity of buried quantum wells. 第71回応用物理学会春季学術講演会. 2024.
36. 間野 高明, 大竹 晃浩. GaAs(111)A上のInSbメタモルフィック成長：InAs界面層の挿入効果. 第71回応用物理学会春季学術講演会. 2024.
37. 岩長 祐伸, 楊 旭, カラニコラス ヴァシレイオス, 黒田 隆, 佐久間 芳樹. 全誘電体メタ表面上の遷移金属ダイカルコゲナイト単原子層における量子コヒーレント状態の可視化. 2024年第71回応用物理学会春季学術講演会. 2024.
38. 宮崎 英樹, 間野 高明, 野田 武司, 笠谷 岳士, ハビブラ ユスフ ババナゲリ, 石田 暢之. アンテナ増強量子ラチェット赤外検出器. 第71回応用物理学会春季学術講演会. 2024.
39. IMURA, Masataka, Manabu Togawa, LIAO, Meiyong, KOIDE, Yasuo. Development of Highly Tolerant Diamond Schottky Barrier Photodiodes for Deep- Ultraviolet Xenon Excimer Lamp and Protons Detection. ISPlasma2024/IC-PLANTS2024/APSPT-13. 2024. 招待講演
40. LIU, Jiangwei, 岡村 雅之, 増子 尚徳, IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. Super-High Dielectric Constant AlOx/TiOy Nanolaminates: Formation and Mechanism Discussion. STAC - D2MatE 2024. 2024.

2023

1. MANO, Takaaki, OHTAKE, Akihiro. InSb growth on GaAs (111)A: Effects of InAs interlayer. 36th International Microprocesses and Nanotechnology Conference (MNC 2023). 2023.
2. 太田 優一, IMURA, Masataka. Natural band alignments of rock-salt structured AlScN and GaScN alloys. The 14th International Conference on Nitride Semiconductors (ICNS-14). 2023.
3. IMURA, Masataka, 稲葉 英樹, MANO, Takaaki, KOIDE, Yasuo. Effect of post-growth annealing with trimethylgallium on structural quality of AlN layers grown on c-plane sapphire substrate by MOVPE. The 14th International Conference on Nitride Semiconductors (ICNS-14). 2023.
4. 山口 優, NISHIOKA, Daiki, NAMIKI, Wataru, TSUCHIYA, Takashi, IMURA, Masataka, KOIDE, Yasuo, Tohru Higuchi, TERABE, Kazuya. Spoken digit recognition using an electric double layer-based ion-gating reservoir. The 6th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2023). 2023.
5. 上松 悠人, 間野 高明, 大竹 晃浩. AlGaAs/GaAs系二次元電子ガスにおける多数サブバンドによる熱電出力因子向上. 第20回日本熱電学会学術講演会. 2023.
6. 岩長 祐伸, 楊 旭, カラニコラス ヴァシレイオス, 黒田 隆, 佐久間 芳樹. プラズモン・フォトンハイブリッドメタ表面による原子層発光増強. 第84回応用物理学会秋季学術講演会. 2023.
7. 間野 高明, 大竹 晃浩, 川津 琢也, 宮崎 英樹, 佐久間 芳樹. InAs/GaAs(111)A赤外線検出器の特性評価. 第84回応用物理学秋季学術講演会. 2023.
8. 上松 悠人, 間野 高明, 大竹 晃浩. AlGaAs/GaAs系二次元電子ガスにおける熱電出力因子制御. 第84回応用物理学秋季学術講演会. 2023.
9. 井村 将隆, サン リウエン, 武田 良彦, 長尾 忠昭, 小出 康夫, 中津川 啓治, 苅宿 俊風, 古月 暁. トポロジカル構造を用いたInGaN系フォトニクスの開発. 第84回応用物理学会秋季学術講演会. 2023.
10. 佐久間 芳樹, 楊 旭, 小野 佑樹, 李 世勝, 廣戸 孝信, 奈良 純, 池沢 道男. MOCVD法によるウエハスケール単層MoS2の高配向エピタキシャル成長. 第84回応用物理学会秋季学術講演会. 2023.
11. 太田 優一, 井村 将隆. 岩塩構造AlScNのバンドアライメント. 第84回応用物理学会秋季学術講演会. 2023.
12. 小野 祐樹, 佐久間 芳樹. MOCVDによる単層MoS2のウェハースケールファンデルワールスエピタキシー. 第84回応用物理学会秋季学術講演会. 2023.
13. 山口 優, 西岡 大貴, 並木 航, 土屋 敬志, 井村 将隆, 小出 康夫, 樋口透, 寺部 一弥. 電気二重層効果を利用したイオンゲーティングリザバーによる発話数字認識タスクの実証. 第84回応用物理学会秋季学術講演会. 2023.
14. 奈良 純, 大竹 晃浩. GaAs(111)B上に成長させたMoTe2単層膜の構造と電子状態. 第84回応用物理学会秋季学術講演会. 2023.
15. 鄭 潤賢, 間野 高明. アナログ宇宙実験へ向けた量子ホールエッジの膨張・収縮観察. 日本物理学会第78回年次大会. 2023.
16. AFSHAN BEGUM, Afshan Begum, YAO Yuanzhao, KURODA, Takashi, TAKEDA, Yoshihiko, IKEDA, Naoki, SUGIMOTO, Yoshimasa, MANO, Takaaki, SAKODA, Kazuaki. Topological edge modes by high-precision nanofabrication of photonic crystals in symmetric silicon-on-insulator slabs. 78th Annual Meeting (2023), The Physical Society of Japan　日本物理学会第78回年次大会. 2023.
17. LIU, Jiangwei, 岡村 雅之, 増子 尚徳, IMURA, Masataka, LIAO, Meiyong, KOIDE, Yasuo. Deposition and mechanism study for super-high dielectric constant AlOx/TiOy nanolaminates. 6th International Conference on MATERIALS SCIENCE & NANOTECHNOLOGY. 2023. 招待講演
18. NISHIOKA, Daiki, TSUCHIYA, Takashi, NAMIKI, Wataru, IMURA, Masataka, KOIDE, Yasuo, Tohru Higuchi, TERABE, Kazuya. Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir. 2023 International conferences on solid state devices and materials (SSDM2023). 2023.
19. 土屋 敬志, 並木 航, 西岡 大貴, 和田 友紀, 山口 優, 柴田 馨, 髙栁 真, 鶴岡 徹, 新ヶ谷 義隆, 井村 将隆, 小出 康夫, 樋口透, 寺部 一弥. 固体電解質界面近傍のイオニクス現象を利用するニューロモルフィックデバイス. 新材料・新原理で築くニューロモルフィックシステム. 2023. 招待講演
20. NARA, Jun, OHTAKE, Akihiro. Geometric and electronic structures of MoTe2 monolayer grown on GaAs(111)B surface. 36th European Conference on Surface Science (ECOSS36). 2023.
21. 楊 旭, 李 世勝, OHTAKE, Akihiro, SAKUMA, Yoshiki. Scalable growth of atomically-thin MoS2 layers in conventional MOCVD system using molybdenum oxychloride as the molybdenum source. ICCGE-20. 2023.
22. 土屋 敬志, 並木 航, 西岡 大貴, 和田 友紀, 山口 優, 柴田 馨, 髙栁 真, 鶴岡 徹, 新ヶ谷 義隆, 井村 将隆, 小出 康夫, 樋口透, 寺部 一弥. 固固界面近傍のイオニクス現象を利用する情報処理デバイス. 第85回固体イオニクス研究会. 2023. 招待講演
23. TSUCHIYA, Takashi, NISHIOKA, Daiki, NAMIKI, Wataru, 髙栁 真, IMURA, Masataka, KOIDE, Yasuo, Tohru Higuchi, TERABE, Kazuya. Ion and Electron Dynamics at Semiconductor/Solid Electrolyte Interfaces and the Application to Neuromorphic Computing. ICMAT 2023 Post Symposium Interface Ionics for All-Solid-State Batteries. 2023.
24. TSUCHIYA, Takashi, NISHIOKA, Daiki, NAMIKI, Wataru, 髙栁 真, IMURA, Masataka, KOIDE, Yasuo, Tohru Higuchi, TERABE, Kazuya. Ion-gating Reservoir for Time-series Pattern Recognition and Prediction Tasks. 11th International Conference on Materials for Advanced Technologies (ICMAT2023). 2023.
25. AFSHAN BEGUM, Afshan Begum, YAO Yuanzhao, KURODA, Takashi, IKEDA, Naoki, SUGIMOTO, Yoshimasa, TAKEDA, Yoshihiko, MANO, Takaaki, SAKODA, Kazuaki. New photonic crystals to materialize isotropic double Dirac cones and topological edge modes. The 7th A3 Metamaterials Forum 2023. 2023. 招待講演
26. Manabu Togawa, IMURA, Masataka. The CIGS semiconductor detector for particle physics. 24th International Workshop on Radiation Imaging Detectors. 2023.
27. MANO, Takaaki. III-V heteroepitaxy on lattice mismatched (111)A-oriented substrates: application for the quantum light emitter and infrared detector. Compound semiconductor week 2023. 2023. 招待講演
28. HA, Neul, MANO, Takaaki, KURODA, Takashi. Droplet epitaxial quantum dots on the (111) surface for entangled photon sources. Compound Semiconductor Week 2023 (CSW 2023). 2023.
29. AFSHAN BEGUM, Afshan Begum, 姚 遠昭, KURODA, Takashi, TAKEDA, Yoshihiko, IKEDA, Naoki, SUGIMOTO, Yoshimasa, MANO, Takaaki, SAKODA, Kazuaki. Observation of topological bandgaps and edge modes in Silicon-on-Insulator photonic crystal slabs. NIMS Advanced Measurement Symposium 2023. 2023.

1. 宮崎 英樹, 間野 高明, 野田 武司, 笠谷 岳士, ハビブラ ユスフ ババナゲリ, 石田 暢之. 光励起された電子を無バイアスで一方向に輸送する光起電力型検出器を開発. フォトニクスニュース. 10 [1] 1-1. 2024. Open Access