Analysis of In <i>x</i> Ga1− <i>x</i> N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control

Masataka Imura, Takanobu Hiroto, Takaaki Mano, Yuri Itokazu, Masafumi Jo.

Journal of Applied Physics 139 [11] 115703. 2026.

https://doi.org/10.1063/5.0307826

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

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MDRavailable Analysis of In <i>x</i> Ga1− <i>x</i> N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control

作成時刻: 2026-03-20 03:06:45 +0900 更新時刻: 2026-04-21 04:34:31 +0900

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