HOME > 論文 > 書誌詳細Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayersAkihiro Ohtake, Takaaki Mano. Japanese Journal of Applied Physics 63 [3] 03SP10. 2024.https://doi.org/10.35848/1347-4065/ad2032 Open Access IOP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者大竹 晃浩間野 高明Materials Data Repository (MDR)上の本文・データセットMDRavailable Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers 作成時刻: 2024-02-14 03:13:41 +0900更新時刻: 2024-05-02 03:11:27 +0900
