HOME > Article > DetailInitial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayersAkihiro Ohtake, Takaaki Mano. Japanese Journal of Applied Physics 63 [3] 03SP10. 2024.https://doi.org/10.35848/1347-4065/ad2032 Open Access IOP Publishing (Publisher) Materials Data Repository (MDR) NIMS author(s)OHTAKE, AkihiroMANO, TakaakiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers Created at: 2024-02-14 03:13:41 +0900 Updated at: 2026-02-22 09:44:26 +0900
