Effect of post-growth annealing with trimethylgallium on structural quality of AlN layers grown on c-plane sapphire substrate by MOVPE
The 14th International Conference on Nitride Semiconductors (ICNS-14). 2023.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2023-11-27 14:51:22 +0900更新時刻: 2023-11-27 14:51:22 +0900