HOME > 論文 > 書誌詳細Atomic-scale insights into carrier generation mechanism in Si-doped GaAs films grown on GaAs(111)A substrateNobuyuki Ishida, Takaaki Mano. Applied Surface Science 711 163920. 2025.https://doi.org/10.1016/j.apsusc.2025.163920 NIMS著者石田 暢之間野 高明Materials Data Repository (MDR)上の本文・データセット作成時刻: 2025-07-23 03:08:32 +0900 更新時刻: 2026-04-02 09:03:53 +0900
