Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er<sub>2</sub>O<sub>3</sub> Dielectrics on Two-Dimensional MoS<sub>2</sub> Field-Effect Transistors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er₂O₃ Dielectrics on Two-Dimensional MoS₂ Field-Effect Transistors
(2次元MoS2電界効果トランジスタ上の高κEr2O3誘電体による等価酸化物厚さスケーリングにおける信頼性の課題)

Shuhong Li, Ryotaro Otake, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe, Yoshiki Sakuma, Kosuke Nagashio.

ACS Materials Letters 7 [5] 1993-2001. 2025.

https://doi.org/10.1021/acsmaterialslett.5c00291

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作成時刻: 2025-05-20 03:06:50 +0900 更新時刻: 2026-11-09 09:11:51 +0900

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