HOME > Article > DetailEffects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidationZhao Ma, Takaaki Mano, Akihiro Ohtake, Takashi Kuroda. Journal of Applied Physics 137 [24] 243102. 2025.https://doi.org/10.1063/5.0274742 Open Access AIP Publishing (Publisher) Materials Data Repository (MDR) NIMS author(s)MANO, TakaakiOHTAKE, AkihiroKURODA, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation Created at: 2025-06-28 03:07:20 +0900 Updated at: 2026-09-12 04:41:49 +0900