Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation

Zhao Ma, Takaaki Mano, Akihiro Ohtake, Takashi Kuroda.

Journal of Applied Physics 137 [24] 243102. 2025.

https://doi.org/10.1063/5.0274742

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

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MDRavailable Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation

作成時刻: 2025-06-28 03:07:20 +0900 更新時刻: 2026-10-13 04:42:01 +0900

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