HOME > 論文 > 書誌詳細Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination(NA)Zhao Ma, Takaaki Mano, Akihiro Ohtake, Takashi Kuroda. Japanese Journal of Applied Physics 63 [12] 121002. 2024.https://doi.org/10.35848/1347-4065/ad9802 Open Access IOP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者マ シャオ間野 高明大竹 晃浩黒田 隆Materials Data Repository (MDR)上の本文・データセットMDRavailable Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination 作成時刻: 2024-12-24 03:16:54 +0900更新時刻: 2025-01-25 04:31:01 +0900