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Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination
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Zhao Ma, Takaaki Mano, Akihiro Ohtake, Takashi Kuroda.

Japanese Journal of Applied Physics 63 [12] 121002. 2024.

https://doi.org/10.35848/1347-4065/ad9802

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination

Created at: 2024-12-24 03:16:54 +0900 Updated at: 2026-10-15 04:32:38 +0900

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