Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

Nobuyuki Ishida, Takaaki Mano.

Nanotechnology 35 [6] 065708. 2024.

https://doi.org/10.1088/1361-6528/ad0b5e

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MDRavailable Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

作成時刻: 2023-12-01 03:15:05 +0900更新時刻: 2025-03-19 07:13:32 +0900

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