Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

Nobuyuki Ishida, Takaaki Mano.

Nanotechnology 35 [6] 065708. 2024.

https://doi.org/10.1088/1361-6528/ad0b5e

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

作成時刻: 2023-12-01 03:15:05 +0900 更新時刻: 2026-10-08 08:54:43 +0900

▲ページトップへ移動