Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM | SAMURAI, NIMS Researchers Directory Service

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Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

Nobuyuki Ishida, Takaaki Mano.

Nanotechnology 35 [6] 065708. 2024.

https://doi.org/10.1088/1361-6528/ad0b5e

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

Created at: 2023-12-01 03:15:05 +0900 Updated at: 2026-10-08 08:54:43 +0900

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