HOME > 論文 > 書誌詳細In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating conditionAkihiro Shimada, Haruna Shiomi, Tetsuya Tohei, Yusuke Hayashi, Masaya Yamaguchi, Junpei Yamamoto, Takeaki Hamachi, Yasuhiko Imai, Kazushi Sumitani, Shigeru Kimura, Shota Kaneki, Tamotsu Hashizume, Akira Sakai. Journal of Applied Physics 138 [7] 075701. 2025.https://doi.org/10.1063/5.0275921 Open Access AIP Publishing (Publisher) Materials Data Repository (MDR) NIMS著者林 侑介Materials Data Repository (MDR)上の本文・データセットMDRavailable <i>In situ</i> nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition 作成時刻: 2025-08-23 03:10:50 +0900 更新時刻: 2026-06-04 08:35:41 +0900
