<i>In situ</i> nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Akihiro Shimada; Haruna Shiomi; Tetsuya Tohei; Yusuke Hayashi; Masaya Yamaguchi; Junpei Yamamoto; Takeaki Hamachi; Yasuhiko Imai; Kazushi Sumitani; Shigeru Kimura; Shota Kaneki; Tamotsu Hashizume; Akira Sakai; Akihiro Shimada; Haruna Shiomi; Tetsuya Tohei; Yusuke Hayashi; Masaya Yamaguchi; Junpei Yamamoto; Takeaki Hamachi; Yasuhiko Imai; Kazushi Sumitani; Shigeru Kimura; Shota Kaneki; Tamotsu Hashizume; Akira Sakai

doi:10.1063/5.0275921

In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Akihiro Shimada, Haruna Shiomi, Tetsuya Tohei, Yusuke Hayashi, Masaya Yamaguchi, Junpei Yamamoto, Takeaki Hamachi, Yasuhiko Imai, Kazushi Sumitani, Shigeru Kimura, Shota Kaneki, Tamotsu Hashizume, Akira Sakai.

Journal of Applied Physics 138 [7] 075701. 2025.

https://doi.org/10.1063/5.0275921

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

HAYASHI, Yusuke

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable <i>In situ</i> nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Created at: 2025-08-23 03:10:50 +0900 Updated at: 2026-07-05 09:02:14 +0900