| 134件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
|---|
| Sota Hida, Takumi Morita, Takahiro Yamasaki, Jun Nara, Takahisa Ohno, Kentaro Kinoshita. Repeatable and reproducible formation/rupture of oxygen vacancy filaments in the vicinity of a polycrystalline HfO2 surface. AIP Advances. 9 [3] (2019) 035309 10.1063/1.5085443 Open Access | |
| Xuanhan Zhao, Panpan Zhou, Liyang Chen, Kenji Watanabe, Takashi Taniguchi, Douglas Natelson. Tunneling noise and defects in exfoliated hexagonal boron nitride. AIP Advances. 9 [10] (2019) 105218 10.1063/1.5126129 Open Access | |
| Ahmed A. M. El-Amir, Takeo Ohsawa, Satoshi Ishii, Masataka Imura, Hiroyo Segawa, Isao Sakaguchi, Tadaaki Nagao, Kiyoshi Shimamura, Naoki Ohashi. Optoelectronic characteristics of the Ag-doped Si p-n photodiodes prepared by a facile thermal diffusion process. AIP Advances. 9 [5] (2019) 055024 10.1063/1.5091661 Open Access | |
| N. H. Nickel, F. Lang, E. G. Villora, K. Shimamura, J. Rappich. Thermal properties of the dominant O – H complex in β-Ga2O3. AIP Advances. 9 [10] (2019) 105026 10.1063/1.5112168 Open Access | |
| Masato Kubota, Seisuke Nigo, Seiichi Kato, Kenta Amemiya. Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina. AIP Advances. 9 [9] (2019) 095050 10.1063/1.5086212 Open Access | |
| Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Hiroshi Oji, Kikuo Yamabe. Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation. AIP Advances. 9 [10] (2019) 105018 10.1063/1.5126050 Open Access | |
| Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide. Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique. AIP Advances. 9 [8] (2019) 085319 10.1063/1.5098489 Open Access | |
| Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura. Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers. APL Materials. 7 [6] (2019) 061107 10.1063/1.5096626 Open Access | |
| Fumikazu Mizutani, Shintaro Higashi, Mari Inoue, Toshihide Nabatame. Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma. AIP Advances. 9 [4] (2019) 045019 10.1063/1.5081727 Open Access | |
| Satoshi Kaneko, Shuhei Watanabe, Shinya Kasai, Tomoaki Nishino, Kazuhito Tsukagoshi, Manabu Kiguchi. Near-infrared-light-induced decomposition of Rhodamine B triggered by localized surface plasmon at gold square dimers with well-defined separation distance. AIP Advances. 9 [3] (2019) 035153 10.1063/1.5093763 Open Access | |
