HOME > 論文 > 書誌詳細Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidationEfi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Hiroshi Oji, Kikuo Yamabe. AIP Advances 9 [10] 105018. 2019.https://doi.org/10.1063/1.5126050 Open Access AIP Publishing (Publisher) NIMS著者インダリ エフィ ダウィ山下 良之Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-10-16 03:00:16 +0900 更新時刻: 2026-10-30 05:46:49 +0900
