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Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation

Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Hiroshi Oji, Kikuo Yamabe.
AIP Advances 9 [10] 105018. 2019.
https://doi.org/10.1063/1.5126050
Open Access AIP Publishing (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2019-10-16 03:00:16 +0900Updated at: 2024-03-31 02:03:00 +0900

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