HOME > 論文 > 書誌詳細Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage techniqueYoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide. AIP Advances 9 [8] 085319. 2019.https://doi.org/10.1063/1.5098489 Open Access AIP Publishing (Publisher) NIMS著者色川 芳宏生田目 俊秀弓削 雅津也大井 暁彦池田 直樹小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-08-27 03:00:15 +0900更新時刻: 2024-03-31 01:38:02 +0900
