HOME > Article > DetailInvestigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage techniqueYoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide. AIP Advances 9 [8] 085319. 2019.https://doi.org/10.1063/1.5098489 Open Access AIP Publishing (Publisher) NIMS author(s)IROKAWA, YoshihiroNABATAME, ToshihideOHI, AkihikoIKEDA, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-08-27 03:00:15 +0900 Updated at: 2026-10-30 05:34:48 +0900