HOME > 論文 > 書誌詳細Optoelectronic characteristics of the Ag-doped Si p-n photodiodes prepared by a facile thermal diffusion processAhmed A. M. El-Amir, Takeo Ohsawa, Satoshi Ishii, Masataka Imura, Hiroyo Segawa, Isao Sakaguchi, Tadaaki Nagao, Kiyoshi Shimamura, Naoki Ohashi. AIP Advances 9 [5] 055024. 2019.https://doi.org/10.1063/1.5091661 Open Access AIP Publishing (Publisher) NIMS著者大澤 健男石井 智井村 将隆瀬川 浩代坂口 勲長尾 忠昭島村 清史大橋 直樹Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-11-06 03:00:26 +0900更新時刻: 2025-03-11 05:14:23 +0900
