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川津 琢也

川津 琢也 (KAWAZU, Takuya) 0000-0001-8081-4167

Address
305-0047 茨城県つくば市千現1-2-1 [アクセス]

[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [公開特許出願]

論文 TSV

2025
  1. Takuya Kawazu. Schottky barrier lowering in n-AlGaAs/GaAs/AlGaAs double heterojunctions by local light illumination. Japanese Journal of Applied Physics. 64 [7] (2025) 075001 10.35848/1347-4065/ade64e Open Access
2024
  1. Takuya Kawazu. Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction. AIP Advances. 14 [12] (2024) 125007 10.1063/5.0233346 Open Access
  2. Akihiro Ohtake, Takuya Kawazu, Takaaki Mano. Arsenic-flux dependence of surface morphology in InAs homoepitaxy. Journal of Vacuum Science & Technology A. 42 [6] (2024) 062702 10.1116/6.0003957 Open Access
2023
  1. Takuya Kawazu, Takaaki Mano, Yoshiki Sakuma. Conduction characteristics of n-InAs/n-GaAs heterojunctions with misfit dislocations. Japanese Journal of Applied Physics. 62 [7] (2023) 074001 10.35848/1347-4065/acdd3c
  2. Takaaki Mano, Akihiro Ohtake, Takuya Kawazu, Hideki T. Miyazaki, Yoshiki Sakuma. Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface. ACS Applied Materials & Interfaces. 15 [24] (2023) 29636-29642 10.1021/acsami.3c05725
2022
  1. Takuya Kawazu. Effects of In composition on the surface morphology of self-assembled In x Ga1−x Sb/GaAs quantum dots. Japanese Journal of Applied Physics. 61 [6] (2022) 065503 10.35848/1347-4065/ac691f
2021
  1. Mel F. Hainey, Takaaki Mano, Takeshi Kasaya, Yoji Jimba, Hiroshi Miyazaki, Tetsuyuki Ochiai, Hirotaka Osato, Yoshimasa Sugimoto, Takuya Kawazu, Akitsu Shigetou, Hideki T. Miyazaki. Breaking the interband detectivity limit with metasurface multi-quantum-well infrared photodetectors. Optics Express. 29 [26] (2021) 43598 10.1364/oe.444223 Open Access
  2. Mel F. Hainey, Takaaki Mano, Takeshi Kasaya, Yoji Jimba, Hiroshi Miyazaki, Tetsuyuki Ochiai, Hirotaka Osato, Kazuhiro Watanabe, Yoshimasa Sugimoto, Takuya Kawazu, Yukinaga Arai, Akitsu Shigetou, Hideki T. Miyazaki. Patchwork metasurface quantum well photodetectors with broadened photoresponse. Optics Express. 29 [1] (2021) 59 10.1364/oe.408515 Open Access
2020
  1. Mel F. Hainey, Takaaki Mano, Takeshi Kasaya, Tetsuyuki Ochiai, Hirotaka Osato, Kazuhiro Watanabe, Yoshimasa Sugimoto, Takuya Kawazu, Yukinaga Arai, Akitsu Shigetou, Hideki T. Miyazaki. Systematic studies for improving device performance of quantum well infrared stripe photodetectors. Nanophotonics. 9 [10] (2020) 3373-3384 10.1515/nanoph-2020-0095 Open Access
  2. Mel F. Hainey, Takaaki Mano, Takeshi Kasaya, Tetsuyuki Ochiai, Hirotaka Osato, Kazuhiro Watanabe, Yoshimasa Sugimoto, Takuya Kawazu, Yukinaga Arai, Akitsu Shigetou, Hideki T. Miyazaki. Near-field resonant photon sorting applied: dual-band metasurface quantum well infrared photodetectors for gas sensing. Nanophotonics. 9 [16] (2020) 4775-4784 10.1515/nanoph-2020-0456 Open Access
  3. Takuya Kawazu. Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illumination. Japanese Journal of Applied Physics. 59 [12] (2020) 124003 10.35848/1347-4065/abc8a4
  4. Hideki T. Miyazaki, Takaaki Mano, Takeshi Kasaya, Hirotaka Osato, Kazuhiro Watanabe, Yoshimasa Sugimoto, Takuya Kawazu, Yukinaga Arai, Akitsu Shigetou, Tetsuyuki Ochiai, Yoji Jimba, Hiroshi Miyazaki. Synchronously wired infrared antennas for resonant single-quantum-well photodetection up to room temperature. Nature Communications. 11 [1] (2020) 565 10.1038/s41467-020-14426-6 Open Access
2019
  1. Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma. Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor. Japanese Journal of Applied Physics. 58 [SI] (2019) SIIB05 10.7567/1347-4065/ab0c76
  2. Takuya Kawazu. Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots. Journal of Nanomaterials. 2019 (2019) 5349291 10.1155/2019/5349291
2018
  1. Takeshi Noda, Martin Elborg, Takaaki Mano, Takuya Kawazu, ELBORG, Martin, MANO, Takaaki, KAWAZU, Takuya, NODA, Takeshi. Dynamical properties and charge accumulation in solar cells with embedded GaSb quantum dots. Japanese Journal of Applied Physics. 57 [8S3] (2018) 08RF10
  2. NODA, Takeshi. Dynamical properties and charge accumulation in solar cells with embedded GaSb quantum dots. Japanese Journal of Applied Physics. 57 [8S3] (2018) 08RF10 10.7567/jjap.57.08rf10
  3. T. Kawazu, T. Noda, Y. Sakuma. Optical AND operation in n-AlGaAs/GaAs heterojunction field effect transistor. Applied Physics Letters. 112 [7] (2018) 072101 10.1063/1.5010845
2017
  1. Takuya Kawazu. Optical anisotropy of InGaAs quantum dot arrays aligned along multiatomic steps on vicinal GaAs(111)B. Journal of Applied Physics. 122 [20] (2017) 204304 10.1063/1.4996058
  2. Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma. Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate. Japanese Journal of Applied Physics. 56 [4S] (2017) 04CG04 10.7567/jjap.56.04cg04
2016
  1. Takuya Kawazu. Optical anisotropy of InGaAs quantum wire arrays on vicinal (111)B GaAs. Journal of Applied Physics. 120 [13] (2016) 134309 10.1063/1.4964338
  2. Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma, Hiroyuki Sakaki. Effects of Ga deposition rate and Sb flux on morphology of GaSb quantum dots formed on GaAs. physica status solidi (c). (2016) 10.1002/pssc.201600109
  3. Pavel Vitushinskiy, Masato Ohmori, Tomohiro Kuroda, Takeshi Noda, Takuya Kawazu, Hiroyuki Sakaki. GaAs-based triangular barrier photodiodes with embedded type-II GaSb quantum dots. Applied Physics Express. 9 [5] (2016) 052002 10.7567/apex.9.052002
  4. T. Kawazu, T. Noda, Y. Sakuma, H. Sakaki. Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy. AIP Advances. 6 [4] (2016) 045312 10.1063/1.4947464 Open Access
  5. T. Noda, M. Elborg, T. Mano, T. Kawazu, L. Han, H. Sakaki. Bias voltage dependence of two-step photocurrent in GaAs/AlGaAs quantum well solar cells. Journal of Applied Physics. 119 [8] (2016) 085105 10.1063/1.4942215
2015
  1. Takuya Kawazu. Electric states in laterally and vertically arrayed type-II quantum dots. Japanese Journal of Applied Physics. 54 [4S] (2015) 04DJ01 10.7567/jjap.54.04dj01
  2. Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma, Hiroyuki Sakaki. Growth and optical properties of GaSb/GaAs type-II quantum dots with and without wetting layer. Japanese Journal of Applied Physics. 54 [4S] (2015) 04DH01 10.7567/jjap.54.04dh01
  3. Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma, Hiroyuki Sakaki. Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination. Applied Physics Letters. 106 [2] (2015) 022103 10.1063/1.4905661
2014
  1. Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma, Hiroyuki Sakaki. Growth of GaSb and AlSb quantum dots on high-index GaAs substrates. Applied Physics Express. 7 [5] (2014) 055502 10.7567/apex.7.055502
  2. T. Noda, L. M. Otto, M. Elborg, M. Jo, T. Mano, T. Kawazu, L. Han, H. Sakaki. GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications. Applied Physics Letters. 104 [12] (2014) 122102 10.1063/1.4869148
  3. Takuya Kawazu. Optical anisotropy in type-II quantum wells on high-index substrates. Journal of Applied Physics. 115 [5] (2014) 053516 10.1063/1.4864422
2013
  1. Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma, Hiroyuki Sakaki. Growth of GaSb quantum dots on GaAs (311)A. Journal of Crystal Growth. 378 (2013) 475-479 10.1016/j.jcrysgro.2012.11.020
  2. T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki. Fabrication of InAs nanoscale rings by droplet epitaxy. Journal of Crystal Growth. 378 (2013) 529-531 10.1016/j.jcrysgro.2012.11.036
  3. Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma, Hiroyuki Sakaki. Photo-induced current in n-AlGaAs/GaAs heterojunction channels driven by local illumination at the edge regions of Hall bar. Applied Physics Letters. 102 [25] (2013) 252104 10.1063/1.4812293
2012
  1. Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma, Hiroyuki Sakaki. Effects of Sb/As Interdiffusion on Optical Anisotropy of GaSb Quantum Dots in GaAs Grown by Droplet Epitaxy. Japanese Journal of Applied Physics. 51 [11R] (2012) 115201 10.1143/jjap.51.115201
  2. Yi Ding, Takeshi Noda, Takaaki Mano, Masafumi Jo, Takuya Kawazu, Liyuan Han, Hiroyuki Sakaki. Current–Voltage Characteristics of GaAs/AlGaAs Coupled Multiple Quantum Well Solar Cells. Japanese Journal of Applied Physics. 51 (2012) 10ND08 10.1143/jjap.51.10nd08
  3. Takeshi Noda, Takaaki Mano, Masafumi Jo, Yi Ding, Takuya Kawazu, Hiroyuki Sakaki. Anomalous Capacitance–Voltage Characteristics of GaAs/AlGaAs Multiple Quantum Well Solar Cells. Japanese Journal of Applied Physics. 51 [10S] (2012) 10ND07 10.1143/jjap.51.10nd07
  4. T. Noda, T. Mano, M. Jo, T. Kawazu, H. Sakaki. Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy. Journal of Applied Physics. 112 [6] (2012) 063510 10.1063/1.4752255
  5. Takuya Kawazu. Effects of interface grading on optical anisotropy in type-II quantum wells on high-index substrates. Physica E: Low-dimensional Systems and Nanostructures. 44 [7-8] (2012) 1351-1356 10.1016/j.physe.2012.02.017
  6. Takuya Kawazu. Effects of Interface Grading on Electronic States in Columnar Type-II Quantum Dots. Japanese Journal of Applied Physics. 51 [2] (2012) 02BJ09 10.1143/jjap.51.02bj09
2011
  1. Takuya Kawazu, Yoshihiro Akiyama, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma, Hiroyuki Sakaki. Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs. Applied Physics Letters. 99 [23] (2011) 231901 10.1063/1.3665394
  2. Takuya Kawazu, Yoshihiro Akiyama, Hiroyuki Sakaki. Self-assembled growth of GaSb type-II nanorods aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs. Journal of Crystal Growth. 335 [1] (2011) 1-3 10.1016/j.jcrysgro.2011.09.016
  3. Takuya Kawazu, Hiroyuki Sakaki. Effects of interface grading on electronic states and optical transitions. Japanese Journal of Applied Physics. 50 [4] (2011) 04DJ06 10.1143/jjap.50.04dj06
2010
  1. Takuya Kawazu, Hiroyuki Sakaki. Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy. Applied Physics Letters. 97 [26] (2010) 261906 10.1063/1.3533019
  2. T. KAWAZU, T. NODA, T. MANO, M. JO, H. SAKAKI. Effects of antimony flux on morphology and photoluminescence spectra of GaSb quantum dots formed on GaAs by droplet epitaxy. Journal of Nonlinear Optical Physics & Materials. 19 [04] (2010) 819-826 10.1142/s0218863510005777
  3. Takuya Kawazu, Hiroyuki Sakaki. Temperature Dependence of Magnetocapacitance in n-AlGaAs/GaAs Selectively Doped Heterojunction with InGaAs Quantum Dots. Japanese Journal of Applied Physics. 49 [9R] (2010) 090205 10.1143/jjap.49.090205
  4. T. Kawazu, T. Mano, T. Noda, H. Sakaki. Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy. Physica E: Low-dimensional Systems and Nanostructures. 42 [10] (2010) 2742-2744 10.1016/j.physe.2010.01.038
2009
  1. Takuya Kawazu, Takaaki Mano, Takeshi Noda, Hiroyuki Sakaki. Two Different Growth Modes of GaSb dots on GaAs (100) by Droplet Epitaxy. Journal of Crystal Growth. 311 [8] (2009) 2255-2257 10.1016/j.jcrysgro.2009.02.005
  2. KAWAZU, Takuya, MANO, Takaaki, NODA, Takeshi, AKIYAMA, Yoshihiro, SAKAKI, Hiroyuki. Growth of GaSb dots on GaAs (100) by droplet epitaxy. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. (2009) 733-735
  3. Takuya Kawazu, Takaaki Mano, Takeshi Noda, Hiroyuki Sakaki. Optical properties of GaSb/GaAs type-ІІ quantum dots grown by droplet epitaxy. Applied Physics Letters. 94 [8] (2009) 081911 10.1063/1.3090033
2008
  1. Takuya Kawazu, Hiroyuki Sakaki. Electron scatterings in selectively doped n-AlGaAs/GaAs heterojunctions with high density self-assembled InAlAs anti dots. Applied Physics Letters. 93 [13] (2008) 132116 10.1063/1.2996414
  2. Masato Ohmori, KAWAZU, Takuya, Kousuke Torii, Takuji Takahashi, SAKAKI Hiroyuki. Formation of Ultra-low Density Self-Organized InAs Quantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method. APPLIED PHYSICS EXPRESS. 1 [6] (2008) 061202-1-061202-3
  3. Takuya Kawazu, Hiroyuki Sakaki. Magnetocapacitance Measurement of Selectively Doped n-AlGaAs/GaAs Heterojunction with InGaAs Quantum Dots. Japanese Journal of Applied Physics. 47 [5] (2008) 3763-3765 10.1143/jjap.47.3763

書籍 TSV

会議録 TSV

2014
  1. Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma, Hiroyuki Sakaki. Growth of GaSb quantum dots on GaAs (111)A. e-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY. (2014) 304-306 10.1380/ejssnt.2014.304
2013
  1. KAWAZU, Takuya, NODA, Takeshi, MANO, Takaaki, SAKUMA, Yoshiki, SAKAKI, Hiroyuki. Post-Growth Anealing of GaSb Quantum Dots in GaAs formed by Droplet Epitaxy. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2013) 1505-1508
2012
  1. NODA, Takeshi, JO, Masafumi, MANO, Takaaki, KAWAZU, Takuya, SAKAKI, Hiroyuki. hysteresis in the Current-Voltage Characteristics of GaAs/AlGaAs coupled quantum well solar cells. Proceedings of PVSEC-22. (2012) 9999
2011
  1. KAWAZU, Takuya, NODA, Takeshi, MANO, Takaaki, Masato Ohmori, Yoshihiro Akiyama, SAKAKI, Hiroyuki. Growth of GaSb and InSb quantum dots on GaAs (311)A by droplet epitaxy. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2011) 275-277
2010
  1. Y. Akiyama, T. Kawazu, T. Noda, H. Sakaki, Marília Caldas, Nelson Studart. Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs. AIP Conference Proceedings. (2010) 10.1063/1.3295401
2008
  1. KAWAZU, Takuya, Hiroyuki Sakaki. Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2008) 2879-2881
2007
  1. Chao Jiang, KAWAZU, Takuya, Shigeki Kobayashi, SAKAKI, Hiroyuki. Molecular beam epitaxial growth of very large lateral anisotropic GaSb/GaAs quantum dots. Journal of Crystal Growth . (2007) 828-832
  2. KAWAZU, Takuya, SAKAKI, Hiroyuki. g-factor of two dimensional electrons in n-AlGaAs/GaAs selectively doped heterojunctions with embedded InGaAs quantum dots. Journal of Crystal Growth . (2007) 910-913
  3. KAWAZU, Takuya, SAKAKI, Hiroyuki. Scattering of two-dimensional electrons by self-assembled InAlAs anti-dots in novel n-AlGaAs/GaAs heterojunctions. Physica E. (2007) 233-236

口頭発表 TSV

2026
  1. MANO, Takaaki, ISHIDA, Nobuyuki, KAWAZU, Takuya, OHTAKE, Akihiro, MIYAZAKI, Hideki. Origin of low dark current operation of InAs/GaAs(111)A infrared detectors: Effects of residual impurities on GaAs substrates. Compound Semiconductor Week 2026 (CSW2026). 2026
  2. ISHIDA, Nobuyuki, KAWAZU, Takuya, OHTAKE, Akihiro, MANO, Takaaki. Direct quantitative visualization of band profile across III-V devices using Kelvin probe force microscopy. Compound Semiconductor Week 2026 (CSW2026) . 2026
2025
  1. ISHIDA, Nobuyuki, KAWAZU, Takuya, OHTAKE, Akihiro, MANO, Takaaki. Operando band visualization of III-V infrared sensor using UHV-KPFM. The 26th International Conference on Non-contact Atomic Force Microscopy (NC-AFM 2025). 2025
  2. 間野 高明, 石田 暢之, 川津 琢也, 大竹 晃浩, 宮崎 英樹. InAs/GaAs(111)A赤外検出器の動作機構：GaAs基板表面の影響. 2025年 第72回応用物理学会春季学術講演会. 2025
2023
  1. 間野 高明, 大竹 晃浩, 川津 琢也, 宮崎 英樹, 佐久間 芳樹. InAs/GaAs(111)A赤外線検出器の特性評価. 第84回応用物理学秋季学術講演会. 2023
2022
  1. 間野 高明, 大竹 晃浩, 川津 琢也, 佐久間 芳樹. GaAs(111)A上のInAsメタモルフィック成長：成長温度依存. 2022年第83回応用物理学秋季学術講演会. 2022
  2. 間野 高明, 大竹 晃浩, 川津 琢也, 宮崎 英樹, 佐久間 芳樹. InAs/GaAs(111)Aのメタモルフィック成長とその赤外線検出器応用. 2022年第69回応用物理学会春季学術講演会. 2022
2021
  1. ヘネ ジュニア メル フォレスト, 間野 高明, 笠谷 岳士, 落合 哲行, 大里 啓孝, 杉本 喜正, 川津 琢也, 重藤 暁津, 神馬洋司, 宮嵜博司, 宮崎 英樹. Giant Responsivity in Metasurface Quantum Well Infrared Photodetectors at High Bias. 2021年第68回応用物理学会春季学術講演会. 2021
2020
  1. HAINEY JR., Mel Forrest, MANO, Takaaki, KASAYA, Takeshi, 神馬 洋司, 宮嵜 博司, OCHIAI, Tetsuyuki, OOSATO, Hirotaka, 渡邉 一弘, SUGIMOTO, Yoshimasa, KAWAZU, Takuya, ARAI, Yukinaga, SHIGETOU, Akitsu, MIYAZAKI, Hideki. Metasurface Quantum Well Photodetectors with Broadened Photoresponse Using Patchwork of Cavities within a Subwavelength Period. Metamaterials'2020 - The 14th International Congress on Artificial Materials for Novel Wave Phenomena. 2020
  2. HAINEY JR., Mel Forrest, MANO, Takaaki, KASAYA, Takeshi, 神馬 洋司, OOSATO, Hirotaka, 渡邉 一弘, SUGIMOTO, Yoshimasa, KAWAZU, Takuya, ARAI, Yukinaga, SHIGETOU, Akitsu, OCHIAI, Tetsuyuki, 宮嵜 博司, MIYAZAKI, Hideki. Broadened Photoresponse of Metasurface Quantum Well Infrared Photodetectors Using a Patchwork of Cavities Within a Subwavelength Period. 2020年第81回応用物理学会秋季学術講演会. 2020
  3. HAINEY JR., Mel Forrest, MANO, Takaaki, KASAYA, Takeshi, OCHIAI, Tetsuyuki, OOSATO, Hirotaka, 渡邉 一弘, SUGIMOTO, Yoshimasa, KAWAZU, Takuya, ARAI, Yukinaga, SHIGETOU, Akitsu, MIYAZAKI, Hideki. Dual-band Metasurface Quantum Well Infrared Photodetectors for NO2 Sensing. 2020年第81回応用物理学会秋季学術講演会. 2020
  4. 宮崎 英樹, 間野 高明, 笠谷 岳士, 大里 啓孝, 渡邉 一弘, 杉本 喜正, 川津 琢也, 新井 志大, 重藤 暁津, 落合 哲行, 神馬 洋司, 宮嵜 博司, ヘネ ジュニア メル フォレスト. 位相同調アンテナを用いたメタ表面量子井戸赤外検出器. 2020年第67回応用物理学会春季学術講演会. 2020
  5. HAINEY JR., Mel Forrest, MANO, Takaaki, KASAYA, Takeshi, OOSATO, Hirotaka, 渡邉 一弘, SUGIMOTO, Yoshimasa, KAWAZU, Takuya, ARAI, Yukinaga, SHIGETOU, Akitsu, OCHIAI, Tetsuyuki, 神馬 洋司, 宮嵜 博司, MIYAZAKI, Hideki. Morphology considerations for optimizing metasurface quantum well photodetector performance. 2020年第67回応用物理学会春季学術講演会. 2020
2019
  1. MIYAZAKI, Hideki, MANO, Takaaki, KASAYA, Takeshi, OOSATO, Hirotaka, 渡邉 一弘, OCHIAI, Tetsuyuki, SUGIMOTO, Yoshimasa, KAWAZU, Takuya, SHIGETOU, Akitsu, ARAI, Yukinaga. Metamaterial quantum well infrared photodetectors based on plasmon-enhanced intersubband transition. the 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019). 2019 招待講演
  2. MIYAZAKI, Hideki, MANO, Takaaki, KASAYA, Takeshi, OOSATO, Hirotaka, 渡邉 一弘, SUGIMOTO, Yoshimasa, KAWAZU, Takuya, OCHIAI, Tetsuyuki, ARAI, Yukinaga, SHIGETOU, Akitsu. Metasurface Quantum-well Infrared Photodetectors. The Fourth A3 Metamaterials Forum. 2019 招待講演
  3. KAWAZU, Takuya, SAKUMA, Yoshiki, NODA, Takeshi, Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illumination. Compound Semiconductor Week 2019 (The 46th International Symposium on Compound Semiconductor). 2019
  4. 川津 琢也, 佐久間 芳樹, 野田 武司, 局所光照射によるn-AlGaAs/GaAsヘテロ接合電界効果トランジスタのショットキー光電流増強効果. 第66回応用物理学会春季学術講演会. 2019
2018
  1. 川津 琢也, 野田 武司, 佐久間 芳樹. n-AlGaAs/GaAs/AlGaAsダブルヘテロ電界効果トランジスタのゲート端局所照射におけるショットキー光電流の温度依存性. ACSIN-14. 2018
  2. 川津 琢也, 野田 武司, 佐久間 芳樹. 微傾斜GaAs(111)B基板上に作製した InGaAs量子細線列の光学異方性. 第79回応用物理学会秋季学術講演会. 2018
  3. 宮崎 英樹, 間野 高明, 笠谷 岳士, 大里 啓孝, 渡邉 一弘, 杉本 喜正, 川津 琢也, 新井 志大, 重藤 暁津. メタ表面量子井戸赤外線検出器. 2018年第65回応用物理学会春季学術講演会. 2018
  4. 川津 琢也, 野田 武司, 佐久間 芳樹. n-AlGaAs/GaAsヘテロ接合電界効果トランジスタにおける光AND演算動作. 第65回応用物理学会春季学術講演会 . 2018
2017
  1. 野田 武司, エルボルグ マーティン, 間野 高明, 川津 琢也. CHARACTERIZATION OF GASB QUANTUM DOT SOLAR CELLS BY CA-PACITANCE MEASURMENETS. The 27th Photovoltaic Science and Engineering Conference. 2017
  2. 川津 琢也, 野田 武司, 佐久間 芳樹. n-AlGaAs/GaAsヘテロ接合電界効果トランジスタの ショットキーゲート端照射による光電流生成. 第78回応用物理学会秋季学術講演会. 2017
2016
  1. 川津 琢也, 野田 武司, 佐久間 芳樹. Photo-induced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination at edge regions of Schottky metal gate. International Conference on Solid State Devices and Materials. 2016
  2. 川津 琢也, 野田 武司, 佐久間 芳樹. Ga堆積速度およびSb分子線圧のGaSb量子ドット形成への影響. 第77回応用物理学会秋季学術講演会 . 2016
  3. 川津 琢也, 野田 武司, 佐久間 芳樹, 榊 裕之. Effects of Ga deposition rate and antimony flux on morphology of GaSb quantum dots formed on GaAs. The 43rd International Symposium on Compound Semiconductor. 2016
  4. 川津 琢也, 野田 武司, 佐久間 芳樹, 榊 裕之. 微傾斜GaAs(111)B基板上に作製したGaSbタイIIナノロッドの光学異方性. 第63回応用物理学会春季学術講演会 . 2016
2015
  1. 川津 琢也, 野田 武司, 佐久間 芳樹, 榊 裕之. ショットキバリアゲート光照射によるn-AlGaAs/GaAsヘテロ接合チャネルの面内電流生成. 第76回応用物理学会秋季学術講演会. 2015
  2. 野田 武司, エルボルグ マーティン, 間野 高明, 川津 琢也, 韓 礼元, 榊 裕之. Characterization of GaSb/GaAs quantum dot solar cells with deep energy states. EP2DS-21/MSS-17. 2015
  3. 川津 琢也, 野田 武司, 佐久間 芳樹, 榊 裕之. GaSb/GaAs量子ドットの光学異方性における後熱処理の効果. 第62回応用物理学会春季学術講演会. 2015
2014
  1. ELBORG, Martin, NODA, Takeshi, BOWMAN, Arthur, KAWAZU, Takuya, MANO, Takaaki, HAN, Liyuan, SAKAKI, Hiroyuki. Characterization and solar cell application of GaSb/AlGaAs quantum dots. 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6). 2014
  2. 川津 琢也, 野田 武司, 間野 高明, 佐久間 芳樹, 榊 裕之. 高指数面GaAs基板上のGaSbおよびAlSb量子ドットの成長. 第75回応用物理学会秋季学術講演会. 2014
  3. 川津 琢也, 野田 武司, 間野 高明, 佐久間 芳樹, 榊 裕之. 濡れ層を持つまたは持たないGaSb/GaAs type-II 量子ドットの作製と光学特性. SSDM2014. 2014
  4. 川津 琢也. 縦および横に配列したType-II 量子ドットの電子状態. SSDM2014. 2014
  5. 野田 武司, 間野 高明, エルボルグ マーティン, 川津 琢也, 韓 礼元, 榊 裕之. 量子井戸太陽電池を用いた二段階光吸収によるフォトカレント生成. 第61回応用物理学会春季学術講演会. 2014
  6. 榊 裕之, 大森, 野田 武司, 川津 琢也, 間野 高明. Recent Progress in Self-Organized Growth of Quantum Dot and Wire Structures . TNT Japan2014. 2014 招待講演
2013
  1. KAWAZU, Takuya. Growth of GaSb quantum dots on GaAs (111)A. ACSIN-12. 2013
  2. 野田 武司, 間野 高明, 川津 琢也, 榊 裕之. ＩｎＰ（111）Ａ基板上のＩｎＡｓドットの液滴エピタキシー. 201３年　第７４回応用物理学会秋季学術講演会. 2013
  3. 川津 琢也, 野田 武司, 間野 高明, 佐久間 芳樹, 榊 裕之. 試料端局所照射によるn-AlGaAs/GaAsヘテロ接合チャネルの光電流. 2013年秋季第74回応用物理学会学術講演会. 2013
  4. KAWAZU, Takuya. Post-Growth Anealing of GaSb Quantum Dots in GaAs formed by Droplet Epitaxy. The 40th International Symposium on Compound Semiconductors. 2013
2012
  1. 野田 武司, 定 昌史, 間野 高明, 川津 琢也, 榊 裕之. Fabrication of InAs nanoscale rings by droplet epitaxy. 17th International Conference on Molecular Beam Epitaxy. 2012
  2. 川津 琢也, 野田 武司, 間野 高明, 佐久間 芳樹, 榊 裕之. GaAs(311)A基板上のGaSbドットの成長. International Conference on Molecular Beam Epitaxy (MBE2012). 2012
  3. 川津 琢也, 野田 武司, 間野 高明, 佐久間 芳樹, 榊 裕之. GaAs(311)A基板上のGaSbドットの成長. 2012年秋季第73回応用物理学会学術講演会. 2012
  4. 野田 武司, 間野 高明, 定 昌史, 川津 琢也, 丁 毅, 榊 裕之. 液滴エピタキシーで形成したＩｎＡsリング状ナノ構造の光学特性. 第59回応用物理学関係連合講演会. 2012
  5. 川津 琢也, 秋山 芳弘, 野田 武司, 間野 高明, 佐久間 芳樹, 榊 裕之. 微傾斜GaAs(111)B基板上のGaSbタイプⅡナノロッドの自己形成. 2012年春季 第59回 応用物理学関係連合講演会. 2012
2011
  1. KAWAZU, Takuya. Effects of Interface Grading on Electronic States in Columnar Type-II Quantum Dots. International Conference on Solid State Devices and Materials. 2011
  2. 間野 高明, 野田 武司, 川津 琢也. 液滴エピタキシー法による様々なナノ構造の自己形成. 第7回量子ナノ材料セミナー. 2011 招待講演
  3. 野田 武司, 間野 高明, 定 昌史, 川津 琢也, 丁 毅, 韓 礼元, 榊 裕之. GaAs/AlGaAs 多重量子井戸太陽電池のＣＶ特性. 第72回応用物理学会学術講演会. 2011
  4. 川津 琢也, 野田 武司, 間野 高明, 佐久間 芳樹, 榊 裕之. 液滴エピタキシー法によるGaSb/GaAs量子ドットの後熱処理効果. 2011年秋季第72回応用物理学会学術講演会. 2011
2010
  1. KAWAZU, Takuya. Effects of interface grading on electronic states and optical transitions. SSDM 2010. 2010
  2. 川津 琢也, 榊 裕之. GaSb/GaAsタイプⅡ量子ドットにおけるSb/As相互拡散の効果. 2010年秋季第71回応用物理学会学術講演会. 2010
  3. KAWAZU, Takuya. Growth of GaSb and InSb quantum dots on GaAs (311)A by droplet epitaxy. The 37th International Symposium on Compound Semiconductors. 2010
  4. KAWAZU, Takuya. Effects of antimony flux on morphology and photoluminescence spectra of GaSb quantum dots formed on GaAs by droplet epitaxy. The International Conference on Nanophotonics 2010. 2010
2009
  1. 秋山 芳広, 川津 琢也, 野田 武司, 榊 裕之. 微傾斜（111）Ｂ面上のＩｎＧａＡｓ結合ドット列を介する異方的量子伝導の温度保存性. 2009年秋　第70回応用物理学会学術講演会. 2009
  2. 川津 琢也, 野田 武司, 間野 高明, 榊 裕之. 液滴エピタキシー法によるGaSb/GaAs量子ドットの熱アニーリング効果. 2009年秋季 第70回応用物理学会学術講演会. 2009
  3. KAWAZU, Takuya. Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy. The 14th Int. Conf. on Modulated Semiconductor structures. 2009
  4. 川津 琢也, 榊 裕之. 高密度InAlAsアンチドット埋め込みヘテロ接合チャネルにおける電子散乱. 2009年春季 第56回応用物理学関係連合講演会. 2009
2008
  1. 川津 琢也, 間野 高明, 野田 武司, 秋山 芳広, 榊 裕之. 液滴エピタキシー法によるGaSbタイプⅡ量子ドットの光学特性 . International Conference on Solid State Devices and Materials . 2008
  2. 川津 琢也, 間野 高明, 野田 武司, 秋山 芳広, 榊 裕之. 液滴エピタキシー法によるGaSb/GaAsタイプⅡ量子ドットの光学特性. 2008年秋季第69回応用物理学会学術講演会 . 2008
  3. KAWAZU, Takuya. Growth of GaSb dots on GaAs (100) by droplet epitaxy. The 5th International Conference on Semiconductor Quantum Dots. 2008
  4. 川津 琢也, 間野 高明, 野田 武司, 秋山 芳広, 榊 裕之. 液滴エピタキシー法によるGaSb/GaAsタイプⅡ量子ドットの作製. 2008年春季第55回応用物理学会学術講演会. 2008
2007
  1. KAWAZU, Takuya. Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction. The 34th International Symposium on Compound Semiconductors. 2007
  2. KAWAZU, Takuya, Hiroyuki Sakaki. Magneto-capacitance measurement of a selectively doped n-AlGaAs/GaAs heterojunction with InGaAs quantum dots. International Conference on Solid State Devices and Materials. 2007
  3. 川津 琢也, 榊裕之. 一定電流を流した際のn-AlGaAs/GaAsヘテロ接合の磁場キャパシタンス. 2007年秋季 第68回応用物理学会学術講演会. 2007
  4. KAWAZU, Takuya. Scattering of two-dimensional electrons by self-assembled InAlAs anti-dots in novel n-AlGaAs/GaAs heterojunctions. Second International Symposium on Nanometer-scale Quantum Physic. 2007
2006
  1. KAWAZU, Takuya. g-factor of two dimensional electrons in n-AlGaAs/GaAs selectively doped heterojunctions with embedded InGaAs quantum dots. 14th International Conference on Molecular Beam Epitaxy. 2006

その他の文献 TSV

2012
  1. NODA, Takeshi, JO, Masafumi, MANO, Takaaki, KAWAZU, Takuya, SAKAKI, Hiroyuki. hysteresis in the Current-Voltage Characteristics of GaAs/AlGaAs coupled quantum well solar cells. Proceedings of PVSEC-22. (2012) 9999

公開特許出願 TSV

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