Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs | SAMURAI, NIMS Researchers Directory Service

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Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs
([英文の直訳]微傾斜(111)B GaAs上の準周期的多段原子ステップに沿ってInGaAsナノ島の鎖が埋め込まれた新奇なFETチャネルにおける異方的な電子伝導)

Y. Akiyama, T. Kawazu, T. Noda, H. Sakaki, Marília Caldas, Nelson Studart.

AIP Conference Proceedings . 2010.

https://doi.org/10.1063/1.3295401

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-02-27 01:30:04 +0900 Updated at: 2026-10-03 05:00:21 +0900

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