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Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction FET by a second light illumination

Compound Semiconductor Week 2019 (The 46th International Symposium on Compound Semiconductor). 2019.

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    作成時刻 :2019-12-25 03:00:24 +0900 更新時刻 :2019-12-25 03:00:24 +0900

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