HOME > 会議録 > 書誌詳細Growth of GaSb and InSb quantum dots on GaAs (311)A by droplet epitaxy(液滴エピタキシー法によるGaAs(311)A基板上のGaSbとInSbドットの成長)KAWAZU, Takuya, NODA, Takeshi, MANO, Takaaki, Masato Ohmori, Yoshihiro Akiyama, SAKAKI, Hiroyuki. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 275-277. 2011.NIMS著者川津 琢也野田 武司間野 高明Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-02-27 01:52:18 +0900更新時刻: 2017-03-17 03:57:09 +0900