Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor

Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma.

Japanese Journal of Applied Physics 58 [SI] SIIB05. 2019.

https://doi.org/10.7567/1347-4065/ab0c76

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作成時刻: 2020-02-17 10:38:08 +0900更新時刻: 2024-04-02 01:26:25 +0900

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