HOME > Article > DetailTemperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistorTakuya Kawazu, Takeshi Noda, Yoshiki Sakuma. Japanese Journal of Applied Physics 58 [SI] SIIB05. 2019.https://doi.org/10.7567/1347-4065/ab0c76 NIMS author(s)KAWAZU, TakuyaNODA, TakeshiSAKUMA, YoshikiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2020-02-17 10:38:08 +0900Updated at: 2024-04-02 01:26:25 +0900