Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate

Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma.

Japanese Journal of Applied Physics 56 [4S] 04CG04. 2017.

https://doi.org/10.7567/jjap.56.04cg04

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作成時刻: 2017-05-27 23:17:50 +0900更新時刻: 2024-04-01 22:44:28 +0900

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