Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate | SAMURAI, NIMS Researchers Directory Service

Scheduled downtime (October 31st and November 1st, 2026) (2026-10-29)

HOME > Article > Detail

Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate

Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma.

Japanese Journal of Applied Physics 56 [4S] 04CG04. 2017.

https://doi.org/10.7567/jjap.56.04cg04

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-05-27 23:17:50 +0900 Updated at: 2026-11-04 05:19:07 +0900

▲ Go to the top of this page