HOME > 口頭発表 > 詳細Effects of Ga deposition rate and antimony flux on morphology of GaSb quantum dots formed on GaAs著者川津 琢也, 野田 武司, 佐久間 芳樹, 榊 裕之. 会議名The 43rd International Symposium on Compound Semiconductor発表年2016言語Japanese
