HOME > Presentation > DetailEffects of Ga deposition rate and antimony flux on morphology of GaSb quantum dots formed on GaAs川津 琢也, 野田 武司, 佐久間 芳樹, 榊 裕之. The 43rd International Symposium on Compound Semiconductor. 2016.NIMS author(s)KAWAZU, TakuyaNODA, TakeshiSAKUMA, YoshikiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-01-08 04:32:23 +0900 Updated at :2017-07-10 22:22:26 +0900