Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy
(Excitation power dependence of photoluminescence spectra of GaSb type-II Quantum Dots in GaAs Grown by Droplet Epitaxy)

T. Kawazu, T. Noda, Y. Sakuma, H. Sakaki.

AIP Advances 6 [4] 045312. 2016.

https://doi.org/10.1063/1.4947464

Open Access AIP Publishing (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-07-11 14:06:12 +0900 更新時刻: 2026-09-28 04:19:16 +0900

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