HOME > 論文 > 書誌詳細Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy(Excitation power dependence of photoluminescence spectra of GaSb type-II Quantum Dots in GaAs Grown by Droplet Epitaxy)T. Kawazu, T. Noda, Y. Sakuma, H. Sakaki. AIP Advances 6 [4] 045312. 2016.https://doi.org/10.1063/1.4947464 Open Access AIP Publishing (Publisher) NIMS著者川津 琢也野田 武司佐久間 芳樹Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-07-11 14:06:12 +0900更新時刻: 2024-03-29 18:42:34 +0900