| 83 article(s) found. Sorted by publication dates. (Help) | |
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| Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Hiroshi Oji, Kikuo Yamabe. Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation. AIP Advances. 9 [10] (2019) 105018 10.1063/1.5126050 Open Access | |
| Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide. Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique. AIP Advances. 9 [8] (2019) 085319 10.1063/1.5098489 Open Access | |
| Fumikazu Mizutani, Shintaro Higashi, Mari Inoue, Toshihide Nabatame. Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma. AIP Advances. 9 [4] (2019) 045019 10.1063/1.5081727 Open Access | |
| Satoshi Kaneko, Shuhei Watanabe, Shinya Kasai, Tomoaki Nishino, Kazuhito Tsukagoshi, Manabu Kiguchi. Near-infrared-light-induced decomposition of Rhodamine B triggered by localized surface plasmon at gold square dimers with well-defined separation distance. AIP Advances. 9 [3] (2019) 035153 10.1063/1.5093763 Open Access | |
| Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe. Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface. AIP Advances. 9 [4] (2019) 045002 10.1063/1.5088541 Open Access | |
| Naoki Fujiwara, Masayoshi Takeuchi, Takanori Kuwayama, Satoshi Nakagawa, Soshi Iimura, Satoru Matsuishi, Hideo Hosono. Pressure-induced quantum critical behavior in LaFeAsO1-xHx studied via NMR. AIP Advances. 8 [10] (2018) 101331 10.1063/1.5042482 Open Access | |
| Ahmed A. M. El-Amir, Takeo Ohsawa, Yoshitaka Matsushita, Yoshiki Wada, Kiyoshi Shimamura, Naoki Ohashi. Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode. AIP Advances. 8 [11] (2018) 115005 10.1063/1.5056221 Open Access | |
| Gaku Imamura, Kota Shiba, Genki Yoshikawa, Takashi Washio. Analysis of nanomechanical sensing signals; physical parameter estimation for gas identification. AIP Advances. 8 [7] (2018) 075007 10.1063/1.5036686 Open Access | |
| T. Yajima, G. Oike, S. Yamaguchi, S. Miyoshi, T. Nishimura, A. Toriumi. Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique. AIP Advances. 8 [11] (2018) 115133 10.1063/1.5055302 Open Access | |
| Masatomo Sumiya, Kiyotaka Fukuda, Hideo Iwai, Tomohiro Yamaguchi, Takeyoshi Onuma, Tohru Honda. Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy. AIP Advances. 8 [11] (2018) 115225 10.1063/1.5052493 Open Access | |
