HOME > 論文 > 書誌詳細Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping techniqueT. Yajima, G. Oike, S. Yamaguchi, S. Miyoshi, T. Nishimura, A. Toriumi. AIP Advances 8 [11] 115133. 2018.https://doi.org/10.1063/1.5055302 Open Access AIP Publishing (Publisher) NIMS著者三好 正悟Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 11:48:57 +0900更新時刻: 2024-03-31 01:34:21 +0900
