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Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique

T. Yajima, G. Oike, S. Yamaguchi, S. Miyoshi, T. Nishimura, A. Toriumi.
AIP Advances 8 [11] 115133. 2018.
https://doi.org/10.1063/1.5055302
Open Access AIP Publishing (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

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