HOME > 論文 > 書誌詳細Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diodeAhmed A. M. El-Amir, Takeo Ohsawa, Yoshitaka Matsushita, Yoshiki Wada, Kiyoshi Shimamura, Naoki Ohashi. AIP Advances 8 [11] 115005. 2018.https://doi.org/10.1063/1.5056221 Open Access AIP Publishing (Publisher) NIMS著者大澤 健男松下 能孝和田 芳樹島村 清史大橋 直樹Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 12:09:21 +0900更新時刻: 2024-03-31 01:09:37 +0900
