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Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode

Ahmed A. M. El-Amir, Takeo Ohsawa, Yoshitaka Matsushita, Yoshiki Wada, Kiyoshi Shimamura, Naoki Ohashi.
AIP Advances 8 [11] 115005. 2018.
https://doi.org/10.1063/1.5056221
Open Access AIP Publishing (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2019-03-01 12:09:21 +0900 Updated at: 2026-09-29 05:19:14 +0900

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