- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [公開特許出願]
論文 TSV
2025
- Muhammad Asharuddin, Rahmat Hidayat, Adhita Asma Nurunnizar, Natalita Maulani Nursam, Valdi Rizki Yandri, Waode Sukmawati Arsyad, Joko Suwardy, Efi Dwi Indari, Yoshiyuki Yamashita. The effect of surface ligands on the surface chemical states and photoluminescence characteristics in cesium lead bromide perovskite nanocrystals. RSC Advances. 15 [37] (2025) 30727-30741 10.1039/d5ra05099e Open Access
2023
- Valdi Rizki Yandri, Adhita Asma Nurunnizar, Rima Debora, Priastuti Wulandari, Natalita Maulani Nursam, Rahmat Hidayat, Efi Dwi Indari, Yoshiyuki Yamashita. Crystal structures and photoluminescence characteristics of cesium lead bromide perovskite nanoplatelets depending on the antisolvent and ligand used in their syntheses. Heliyon. (2023) e23276 10.1016/j.heliyon.2023.e23276 Open Access
2022
- Yoshiyuki Yamashita, Jun Nara, Efi Dwi Indari, Takahiro Yamasaki, Takahisa Ohno, Ryu Hasunuma. Experimental and theoretical studies on atomic structures of the interface states at SiO2/4H-SiC(0001) interface. Journal of Applied Physics. 131 [21] (2022) 215303 10.1063/5.0093267
2021
- 山下 良之, インダリ エフィ ダウィ, Ryu HASUNUMA. SiO2/4H-SiC における界面準位と界面構造の相関. 表面と真空. 64 [7] (2021) 312-317 10.1380/vss.64.312 Open Access
2019
- Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Hiroshi Oji, Kikuo Yamabe. Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation. AIP Advances. 9 [10] (2019) 105018 10.1063/1.5126050 Open Access
- Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe. Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface. AIP Advances. 9 [4] (2019) 045002 10.1063/1.5088541 Open Access
書籍 TSV
会議録 TSV
口頭発表 TSV
2023
- INDARI, Efi Dwi, ISHII, Kento, HARA, Toru, HARA, Yuka, UCHIKOSHI, Tetsuo, Damien Bolore, Florial Beaugnon, Sunhwi Bang, Deniz Cetin, Darren Rogers. 3D-Image Analysis of the Microstructure of Porous High-Temperature Ceramics using FIB-SEM. The 8th Thailand International Nanotechnology Conference (NanoThailand 2023). 2023
2022
- YAMASHITA, Yoshiyuki, INDARI, Efi Dwi, 蓮沼 隆. Gap States at SiO2/4H-SiC interface obtained from Oprando Hard X-ray Photoelectron Spectroscopy. THE 9th INTERNATIONAL CONFERENCE ON HARD X-Ray PHOTOELECTRON SPECTROSCOPY. 2022
2021
- 山下 良之, インダリ エフィ ダウィ, 蓮沼 隆. Interfacial Atomic Structures and Interface States at SiO2/4H-SiC. The 9th International Symposium on Surface Science (ISSS9). 2021
- 山下 良之, インダリ エフィ ダウィ, 蓮沼 隆. SiO2/4H-SiC界面における界面準位と界面構造の相関. 第82回応用物理学会秋季学術講演会. 2021
2020
- 山下 良之, インダリ エフィ ダウィ, 蓮沼 隆. SiO2/4H-SiC界面における界面準位と界面構造の相関 . Symposium on Practical Surface Analysis 2020. 2020
- 山下 良之, インダリ エフィ ダウィ, 蓮沼 隆, 山部 紀久夫. SiO2/4H-SiC界面における界面準位と界面構造の相関. 日本表面・真空学会. 2020
2019
- 山下 良之, インダリ エフィ ダウィ, 蓮沼 隆, 山部喜久夫. SiO2/4H-SiC (000-1) 界面における界面準位、リーク電流、バンドオフセットの関係. 2019年日本表面真空学会学術講演会. 2019
2018
- インダリ エフィ ダウィ, 山下 良之, 長田 貴弘, 上田 茂典, Ryu Hasunuma, Kikuo Yamabe. Effect of Conduction Band Offset on Breakdown Voltage at SiO2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy. 79th of JSAP Autumn Meeting 2018. 2018
- インダリ エフィ ダウィ, 山下 良之, Ryu Hasunuma, Kikuo Yamabe. Effect of Conduction Band Offset on Gate Leakage Current at SiO2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy. SSDM2018. 2018