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SiO2/4H-SiC (000-1) 界面における界面準位、リーク電流、バンドオフセットの関係
(Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface)
2019年日本表面真空学会学術講演会. October 28, 2019-October 30, 2019.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2020-02-29 03:17:14 +0900 Updated at: 2020-02-29 03:17:14 +0900